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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

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TLDR
In this paper, an angle-resolved photo-emission spectroscopy study was conducted to reveal the first observation of a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi-2Se-3 class of materials.
Abstract
Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks. It has been proposed that a topological insulator with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi_2Se_3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi_2Se_3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

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Rydberg-atom quantum simulation and Chern-number characterization of a topological Mott insulator

TL;DR: In this paper, the authors considered a spinless fermions with nearest and next-to-nearest neighbor repulsive Hubbard interactions on a honeycomb lattice, and proposed and analyzed a realistic scheme for analog quantum simulation of this model with cold atoms in a two-dimensional hexagonal optical lattice.
Journal ArticleDOI

Topological insulator Bi2Se3 nanowire high performance field-effect transistors.

TL;DR: In this paper, the conduction channel of a single-crystal nanowires of the topological insulator Bi2Se3 can be used as the channel for a field effect transistor (FET), a basic circuit building block.
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Full electrical control of charge and spin conductance through interferometry of edge states in topological insulators

TL;DR: In this paper, the authors investigate electron interferometry of edge states in topological insulators and show that when interboundary coupling is induced at two quantum point contacts of a four terminal setup, both Fabry-P\'erot-like and Aharonov-Bohm-like loop processes arise.
Journal ArticleDOI

Topological insulators from the perspective of first‐principles calculations

TL;DR: Topological insulators are new quantum states with helical gapless edge or surface states inside the bulk band gap as discussed by the authors, which are robust against weak time-reversal invariant perturbations without closing the bulk bands gap, such as lattice distortions and nonmagnetic impurities.
Journal ArticleDOI

Photonic simulation of topological excitations in metamaterials.

TL;DR: This work reports an experimental implement of the band inversion in the Dirac equation, which accompanies change of chirality of electromagnetic wave in metamaterials, and the first microwave measurement of topological excitations and topological phases in one dimension.
References
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Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Quantum Spin Hall Insulator State in HgTe Quantum Wells

TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

TL;DR: It is shown that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.
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