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Oxygen Impurities Link Bistability and Magnetoresistance in Organic Spin Valves

Ilaria Bergenti, +12 more
- 07 Feb 2018 - 
- Vol. 10, Iss: 9, pp 8132-8140
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TLDR
Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and the measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.
Abstract: 
Vertical crossbar devices based on manganite and cobalt injecting electrodes and a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) and electrical bistability. The two effects are strongly interwoven, inspiring new device applications such as electrical control of the MR and magnetic modulation of bistability. To explain the device functionality, we identify the mechanism responsible for electrical switching by associating the electrical conductivity and the impedance behavior with the chemical states of buried layers obtained by in operando photoelectron spectroscopy. These measurements revealed that a significant fraction of oxygen ions migrate under voltage application, resulting in a modification of the electronic properties of the organic material and of the oxidation state of the interfacial layer with the ferromagnetic contacts. Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and our measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.

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Journal ArticleDOI

Spin Transport in Organic Molecules.

Lidan Guo, +5 more
- 18 Jun 2019 - 
TL;DR: In this review, the recent advances of spin transport in π-conjugated molecular materials, considered as promising for spintronics development, have been highlighted, including molecular single crystal, cocrystal, solid solution as well as other highly ordered supramolecular structures.
Journal ArticleDOI

Innovation of Materials, Devices, and Functionalized Interfaces in Organic Spintronics

Dong Li, +1 more
- 15 Apr 2021 - 
Journal ArticleDOI

Controlling Magnetoresistance by Oxygen Impurities in Mq3-Based Molecular Spin Valves

Alberto Riminucci, +6 more
- 05 Feb 2019 - 
TL;DR: All salient features of these devices, particularly the intimate correlation between MR and resistance, can be accounted for by the impurity band model, based on oxygen migration, and the critical importance of the carrier concentration in determining spin transport and MR in OSVs is highlighted.
Journal ArticleDOI

Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers

Xiannian Yao, +6 more
- 03 May 2018 - 
TL;DR: Basic knowledge of the fabrication and evaluation of organic spin devices is introduced, some remarkable applications for organic spin valves using molecular spacers are reviewed, and the current bottlenecks that hinder further enhancement for the performance of organicspin devices are discussed.
Journal ArticleDOI

HAXPES for Materials Science at the GALAXIES Beamline

Jean-Pascal Rueff, +5 more
- 04 Jul 2018 - 
TL;DR: The need for new materials is constantly growing as their use becomes more and more critical for technological advances as mentioned in this paper, and materials come in a wide variety of structures, dimensionalities, and phases.
References
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Journal ArticleDOI

Spin-dependent transport behavior in C60 and Alq3 based spin valves with a magnetite electrode (invited)

Xianmin Zhang, +7 more
- 09 Apr 2014 - 
TL;DR: The spin-dependent transport behavior in organic semiconductors (OSs) is generally observed at low temperatures, which likely results from poor spin injection efficiency at room temperature from the ferromagnetic metal electrodes to the OS layer as discussed by the authors.
Journal ArticleDOI

Electronic structure of the organic semiconductor Alq3 (aluminum tris-8-hydroxyquinoline) from soft x-ray spectroscopies and density functional theory calculations

A. DeMasi, +12 more
- 10 Dec 2008 - 
TL;DR: Comparison of previous x-ray emission studies and the present data reveal the presence of clear photon-induced damage in the former, which is shown to be able to measure the partial density of states associated with individual C sites.
Journal ArticleDOI

Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor Alq3

Andrey Sidorenko, +10 more
- 22 Oct 2010 - 
TL;DR: In this article, the effect of the AlOx barrier thickness on magnetic and morphological properties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studied by means of atomic force microscopy, superconducting quantum interference device magnetometry, and nuclear magnetic resonance (NMR).
Journal ArticleDOI

Electronic structure of tris(8-hydroxyquinolinato)aluminium(III) revisited using the Heyd-Scuseria-Ernzerhof hybrid functional: Theory and experiments

Federico Bisti, +4 more
- 09 Nov 2011 - 
TL;DR: In this article, the electronic properties of tris(8-hydroxyquinolinato)aluminium(III) (AlQ${}_{3}$) have been revisited using the screened hybrid Heyd-Scuseria-Ernzerhof density functional theory.
Journal ArticleDOI

Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction

Bin Li, +5 more
- 01 Jun 2010 - 
TL;DR: In this paper, a spin valve effect was observed in an organic device using half-metallic La0.7Sr0.3MnO3 (LSMO) and Fe as the two ferromagnetic electrodes.
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Frequently Asked Questions (1)
Q1. What are the contributions in "Oxygen impurities link bistability and magnetoresistance in organic spin valves" ?

In this paper, the authors focus their attention to the prototypical device composed of metal-quinoline injectors with bistable sensors and demonstrate that resistive switching ( RS ) behavior in organic devices has excited substantial attention because, in addition to the well-known aspects of high performance and low volatility that are inherent to RS memory, the use of organic components would yield easy-to-process, flexible devices.