Journal ArticleDOI
Photocurrent in ZnO nanowires grown from Au electrodes
Kihyun Keem,Hyun-Suk Kim,Gyu Tae Kim,Jong-Soo Lee,Byungdon Min,Kyoungah Cho,Man Young Sung,Sangsig Kim +7 more
TLDR
In this paper, the photoresponse of ZnO nanowires under continuous illumination of light with above- or below-gap energies was found to be slow, which indicates that the photocurrent in the nanwires is surface-related rather than bulk-related.Abstract:
ZnO nanowires were grown between two Au electrodes on an Al2O3-deposited Si wafer. Photoresponse, photoresponse spectrum, and current–voltage (I–V) studies were performed for the investigation into photoconduction mechanism in these nanowires. The photoresponse of the nanowires under the continuous illumination of light with above- or below-gap energies was slow, which indicates that photocurrent in the nanowires is surface-related rather than bulk-related. The photoresponse spectrum represents the above- and below-gap absorption bands for the photocurrents. The I–V characteristics under the illumination of the above-gap light are ohmic, but the characteristics under the illumination of the below-gap light are Schottky. This observation indicates that the above-gap light lowers the potential barrier built in the contact between the ZnO nanowires and electrodes, but that the below-gap light does not lower the potential barrier.read more
Citations
More filters
Journal ArticleDOI
ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci,Arthur Zhang,Bin Xiang,Shadi A. Dayeh,David P. R. Aplin,Jeongwon Park,Xinyu Bao,Yu-Hwa Lo,Deli Wang +8 more
TL;DR: Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products higher than approximately 10 GHz, which promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
Journal ArticleDOI
ZnO nanorods: synthesis, characterization and applications
TL;DR: A review of current research activities on ZnO nanorods (or nanowires) can be found in this paper, where a wide range of interesting properties such as luminescence, field emission, gas sensing and electron transport, as well as various intriguing applications are discussed.
Journal ArticleDOI
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
Journal ArticleDOI
Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications
TL;DR: A comprehensive review of the state-of-the-art research activities that focus on the Q1D metal oxide systems and their physical property characterizations is provided in this paper, where a range of remarkable characteristics are organized into sections covering a number of metal oxides, such as ZnO, In2O3, SnO2,G a 2O3 and TiO2, etc., describing their electrical, optical, magnetic, mechanical and chemical sensing properties.
References
More filters
Journal ArticleDOI
Nanowire ultraviolet photodetectors and optical switches
TL;DR: In this paper, the photoconducting properties of individual semiconductor nanowires are explored and the authors show the possibility of creating highly sensitive nanowire switches by exploring the photocconducting properties.
Journal ArticleDOI
Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering
TL;DR: In this paper, the photoresponse characteristics of polycrystalline ZnO films prepared by the unbalanced magnetron sputtering technique have been analyzed for ultraviolet photodetector applications.
Journal ArticleDOI
Photoconductivity of Ultrathin Zinc Oxide Films
TL;DR: In this paper, the authors investigated the electrical and photoelectrical properties of non-doped and doped zinc oxide films coated on glass plates by the dip-coating method at room temperature in various ambient atmospheres.
Journal ArticleDOI
Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO
Takashi Koida,Shigefusa F. Chichibu,Akira Uedono,Atsushi Tsukazaki,Masashi Kawasaki,T. Sota,Y. Segawa,Hideomi Koinuma +7 more
TL;DR: In this article, the influence of point defects on the nonradiative processes in ZnO was studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement.
Journal ArticleDOI
Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films
TL;DR: In this article, slow photoconductivity transients were comprehensively studied in ZnO films prepared by spray pyrolysis of the zinc-nitrate solution, and it was possible to reversibly change the conductivity by short-term annealing in hydrogen and oxygen.