Journal ArticleDOI
Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs
I. I. Izhnin,A. I. Izhnin,K. D. Mynbaev,N. L. Bazhenov,A. V. Shilyaev,N. N. Mikhailov,V. S. Varavin,S. A. Dvoretsky,O. I. Fitsych,A.V. Voitsekhovsky +9 more
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TLDR
In this article, the photoluminescence of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied.Abstract:
Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T∼230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.read more
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Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm
S. V. Morozov,V. V. Rumyantsev,Mikhail A. Fadeev,M. S. Zholudev,K. E. Kudryavtsev,A. V. Antonov,A. M. Kadykov,A. A. Dubinov,N. N. Mikhailov,Sergey A. Dvoretsky,Vladimir I. Gavrilenko +10 more
TL;DR: In this article, the authors report on stimulated emission at wavelengths up to 19.5μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCDTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates.
Journal ArticleDOI
HgCdTe-based heterostructures for terahertz photonics
Sandra Ruffenach,A. M. Kadykov,A. M. Kadykov,Vladimir Rumyantsev,Vladimir Rumyantsev,Jeremie Torres,D. Coquillat,Dmytro B. But,Sergey S. Krishtopenko,Sergey S. Krishtopenko,Christophe Consejo,Wojciech Knap,S. Winnerl,Manfred Helm,Manfred Helm,Mikhail A. Fadeev,Mikhail A. Fadeev,Nikolay N. Mikhailov,Nikolay N. Mikhailov,S. A. Dvoretskii,Vladimir I. Gavrilenko,Vladimir I. Gavrilenko,S. V. Morozov,S. V. Morozov,Frederic Teppe +24 more
TL;DR: In this paper, the effect of HgCdTe on the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition was investigated.
Journal ArticleDOI
Luminescence of II–VI and III–V nanostructures
K. D. Mynbaev,K. D. Mynbaev,A.V. Shilyaev,A. A. Semakova,A. A. Semakova,E.V. Bykhanova,E.V. Bykhanova,N. L. Bazhenov +7 more
Abstract: Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.
Journal ArticleDOI
Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K
S. V. Morozov,S. V. Morozov,Vladimir Rumyantsev,Vladimir Rumyantsev,Alexander A. Dubinov,Alexander A. Dubinov,A. V. Antonov,A. V. Antonov,A. M. Kadykov,A. M. Kadykov,K. E. Kudryavtsev,K. E. Kudryavtsev,D. I. Kuritsin,D. I. Kuritsin,Nikolay N. Mikhailov,Nikolay N. Mikhailov,S. A. Dvoretskii,Vladimir I. Gavrilenko,Vladimir I. Gavrilenko +18 more
TL;DR: In this article, experimental evidence of long wavelength superluminescence (SL) amplification of spontaneous emission in narrow gap HgCdTe bulk epitaxial film at 100 K is reported.
Journal ArticleDOI
Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy
K. D. Mynbaev,K. D. Mynbaev,A. V. Shilyaev,N. L. Bazhenov,A. I. Izhnin,I. I. Izhnin,Nikolay N. Mikhailov,V. S. Varavin,Sergey A. Dvoretsky,Sergey A. Dvoretsky +9 more
TL;DR: In this article, the photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy.
References
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Journal ArticleDOI
Microstructures produced during the epitaxial growth of InGaN alloys
TL;DR: In this paper, the authors considered a set of physical phenomena occurring during epitaxial growth, including coupling that exists between the various effects, and concluded that several separate mechanisms exist for phase separation.
Journal ArticleDOI
Temperature dependence of the fundamental absorption edge of mercury cadmium telluride
TL;DR: In this paper, the temperature dependence of the fundamental absorption edge of a series of Hg1−xCdxTe alloys was investigated in the light of the three-dimensional theory of direct-allowed excitons, and precise values for the fundamental Γ8−Γ6 interband transition energy in a temperature range extending from 0 to 300 K were obtained.
Journal ArticleDOI
Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control
N. N. Mikhailov,R.N. Smirnov,S.A. Dvoretsky,Yu.G. Sidorov,V. A. Shvets,E. V. Spesivtsev,S. V. Rykhlitski +6 more
TL;DR: In this paper, the authors demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy.
Journal ArticleDOI
3.2 μm infrared resonant cavity light emitting diode
TL;DR: In this paper, a CdHgTe resonant cavity light emitting diode is proposed as a new infrared emitter, which consists of a bottom Bragg reflector of 86% reflectivity, a half-wavelength cavity, n doped at the beginning (1018 cm−3) and p doped in the end (1.8 cm −3), containing an active layer at the antinode position, and a top gold mirror of 95% reflectivities which also serves as an Ohmic contact.
Journal ArticleDOI
HgCdTe: Recent Trends in the Ultimate IR Semiconductor
TL;DR: The current status of the many technologies relevant to the continued good health of HgCdTe is discussed in this article, with regard to both their present limitations and possible opportunities for improvement.