Journal ArticleDOI
Photoresponse analysis and pixel shape optimization for CMOS active pixel sensors
I. Shcherback,Orly Yadid-Pecht +1 more
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In this paper, a semi-analytical model is developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor (APS) based on a thorough analysis of experimental data.Abstract:
In this work, a semi-analytical model, based on a thorough analysis of experimental data, is developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor (APS). The model covers the substrate diffusion effect together with the influence of the photodiode active-area geometrical shape and size. It describes the pixel response dependence on integration photocarriers and conversion gain and demonstrates that the tradeoff between these two conflicting factors gives an optimum geometry enabling extraction of maximum photoresponse. The parameter dependence on the process and design data and the degree of accuracy for the photoresponse modeling are discussed. Comparison of the derived expression with the measurement results obtained from a 256/spl times/256 CMOS APS image sensor fabricated via HP in a standard 0.5-/spl mu/m CMOS process exhibits excellent agreement. The simplicity and the accuracy of the model make it a suitable candidate for implementation in photoresponse simulation of CMOS photodiode arrays.read more
Citations
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Review of CMOS image sensors
TL;DR: In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations, leading to the State-of-the-art of CMOS image sensors.
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A 10 000 fps CMOS Sensor With Massively Parallel Image Processing
TL;DR: A high-speed analog VLSI image acquisition and pre-processing system has been designed and fabricated in a 0.35 ¿m standard CMOS process enabling the computation of programmable low-level image processing in each pixel.
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High-level numerical simulations of noise in CCD and CMOS photosensors: review and tutorial.
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TL;DR: A high-level model of CCD and CMOS photosensors based on a literature review is formulated and can be used to create synthetic images for testing and validation of image processing algorithms in the presence of realistic images noise.
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Effect of 6MeV electron irradiation on electrical characteristics of the Au/n-Si/Al Schottky diode
TL;DR: In this article, the Au/n-Si/Al Schottky diode was irradiated with 6MeV electrons and 3x10^1^2e^-/cm^2 fluency.
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A 151 dB High Dynamic Range CMOS Image Sensor Chip Architecture With Tone Mapping Compression Embedded In-Pixel
TL;DR: This paper presents a high dynamic range CMOS image sensor that implements an in-pixel content-aware adaptive global tone mapping algorithm during image capture operation that achieves high-frame rate allowing real-time high dynamicrange video.
References
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Journal ArticleDOI
CMOS image sensors: electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Book
Semiconductor Optoelectronic Devices
TL;DR: In this article, the properties of semiconductors and their properties are investigated in the context of light-emitting diodes, solar cells, and opto-electronic integrated circuits.
Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
CMOS active pixel image sensors for highly integrated imaging systems
Sunetra K. Mendis,Sabrina E. Kemeny,R.C. Gee,Bedabrata Pain,Craig Staller,Quiesup Kim,Eric R. Fossum +6 more
TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.