Journal ArticleDOI
Technology and device scaling considerations for CMOS imagers
TLDR
In this paper, the impact of device and technology scaling on active pixel CMOS image sensors is analyzed using the SLA roadmap as a guideline, and the authors calculate the device characteristics that are germane to the image sensing performance of CMOS imagers, and highlight the areas where the CIMOS imager technology may need to depart from standard CMOS technologies.Abstract:
This paper presents an analysis of the impact of device and technology scaling on active pixel CMOS image sensors. Using the SLA roadmap as a guideline, we calculate the device characteristics that are germane to the image sensing performance of CMOS imagers, and highlight the areas where the CIMOS imager technology may need to depart from "standard" CMOS technologies. The impact of scaling on those analog circuit performance that pertain to image sensing performances are analyzed. Our analyses suggest that while "standard" CMOS technologies may provide adequate imaging performance at the 2-1 /spl mu/m generation without any process change, some modifications to the fabrication process and innovations of the pixel architecture are needed to enable CMOS to perform good quality imaging at the 0.5 /spl mu/m technology generation and beyond. Finally, the challenges to the CMOS imager research community are outlined.read more
Citations
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Journal ArticleDOI
CMOS image sensors: electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
Review of CMOS image sensors
TL;DR: In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations, leading to the State-of-the-art of CMOS image sensors.
Patent
Color separation in an active pixel cell imaging array using a triple-well structure
TL;DR: In this paper, a preferred imaging array (102, 104, 106) is based upon a three-color pixel sensor using a triple-well structure (100), which results in elimination of color aliasing by measuring each of the three primary colors (RGB) in each pixel in the same location.
Patent
Active pixel sensor integrated with a pinned photodiode
TL;DR: In this article, a pinned photodiode is integrated into the image sensing element of an active pixel sensor, and charge integrated within the active pixel is transferred into the charge sensing node by a transfer gate.
References
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Journal ArticleDOI
Design of ion-implanted MOSFET's with very small physical dimensions
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Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
CMOS active pixel image sensors for highly integrated imaging systems
Sunetra K. Mendis,Sabrina E. Kemeny,R.C. Gee,Bedabrata Pain,Craig Staller,Quiesup Kim,Eric R. Fossum +6 more
TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI
Active Pixel Sensors: Are CCD's Dinosaurs?
TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.