Journal ArticleDOI
Repair of thin thermally grown silicon dioxide by anodic oxidation
TLDR
In this paper, anodic oxidation in 0.1 M HCl followed by a post-rapid thermal annealing process has been used to repair defects existing in thin thermally grown oxide layers (3 and 6) on a p-type silicon substrate.About:
This article is published in Electrochimica Acta.The article was published on 2008-03-10. It has received 18 citations till now. The article focuses on the topics: Equivalent oxide thickness & Oxide.read more
Citations
More filters
Journal ArticleDOI
Electrochemical evaluation of the surface of chalcopyrite during dissolution in sulfuric acid solution
TL;DR: In this article, the dissolution of a massive chalcopyrite electrode was studied in 0.5 m sulfuric acid solution and different anodic potentials were applied and the behavior of the electrode was observed by means of EIS, potentiodynamic, and Mott-Schottky techniques.
Journal ArticleDOI
High resolution LAPS and SPIM
TL;DR: In this article, the resolution of photocurrent measurements at field effect capacitors as used in light-addressable potentiometric sensors (LAPS) and scanning photo-induced impedance microscopy (SPIM) has been investigated using silicon on sapphire (SOS) substrates illuminated at different wavelengths.
Journal ArticleDOI
The role of cupric ions in the oxidative dissolution process of marmatite: A dependence on Cu2+ concentration.
Xiaoyu Meng,Hongbo Zhao,Hongbo Zhao,Hongbo Zhao,Menglin Sun,Yisheng Zhang,Yanjun Zhang,Xin Lv,Hyunjung Kim,Mikhail Vainshtein,Shuai Wang,Guanzhou Qiu,Guanzhou Qiu +12 more
TL;DR: Electrochemical measurement and X-ray photoelectron spectroscopy analysis indicated that Cu2+ was first adsorbed on the marmatite surface and then produced Cu-S surface species, thus catalyzing the oxidative dissolution process.
Journal ArticleDOI
Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid
TL;DR: An ultrathin silicon dioxide (SiO2) layer of 1.2-1.4 nm thickness has been formed by immersion of Si wafers in nitric acid (HNO3) aqueous solutions, and its electrical characteristics and physical properties are investigated as a function of the HNO3 concentration as mentioned in this paper.
Journal ArticleDOI
Microfluidic chip system integrated with light addressable potentiometric sensor (LAPS) for real-time extracellular acidification detection
Tao Liang,Tao Liang,Chenlei Gu,Ying Gan,Qian Wu,Chuanjiang He,Jiawei Tu,Yuxiang Pan,Yong Qiu,Liubing Kong,Hao Wan,Hao Wan,Ping Wang,Ping Wang +13 more
TL;DR: The results show that the microfluidic LAPS presents good performance in real-time detection of cell acidification and provides a convenient means of assessing cellular specificity of drugs.
References
More filters
Journal ArticleDOI
Dielectric Reliability Measurement Methods: A Review
TL;DR: A review of the most common dielectric reliability measurement methods can be found in this paper, where a broad number of different measurement techniques are described in detail for which the set up of the measurement and its stress parameters are clarified.
Journal ArticleDOI
Scanned light pulse technique for the investigation of insulator-semiconductor interfaces
Olof Engström,Annelie Carlsson +1 more
TL;DR: In this paper, a new measurement method, scanned light pulse technique, for the investigation of the interface properties of metal-insulator-semiconductor (MIS) structures is introduced.
Journal ArticleDOI
Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator
TL;DR: In this article, a p-channel Al gate transistor with amorphous Ta/sub 2/O/sub 5/ insulator gates was fabricated using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 GHz) excited electron cyclotron resonance reactor.
Journal ArticleDOI
High resolution LAPS using amorphous silicon as the semiconductor material
Werner Moritz,Tatsuo Yoshinobu,Friedhelm Finger,Steffi Krause,Marisa L. Martin-Fernandez,Michael J. Schöning +5 more
TL;DR: In this paper, the authors investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates.
Journal ArticleDOI
Gas response dependence on gate metal morphology of field-effect devices
TL;DR: In this paper, the dependence of the gas response on the gate metal morphology of field-effect gas sensors was investigated using a scanning light pulse technique (SLPT) together with a new systematic way.
Related Papers (5)
Electrochemical characterization of chemical species formed during the electrochemical treatment of chalcopyrite in sulfuric acid
Dora Nava,Ignacio González +1 more