Proceedings ArticleDOI
System in package with mounted capacitor for reduced parasitic inductance in voltage regulators
Takayuki Hashimoto,Tetsuya Kawashima,Tomoaki Uno,Yukihiro Satou,Nobuyoshi Matsuura +4 more
- pp 187-191
TLDR
In this article, a system in package (SiP) on which an input capacitor is mounted has been developed for voltage regulators, which offers the world's lowest power dissipation of 3.8 W at 1 MHz.Abstract:
A system in package (SiP) on which an input capacitor is mounted has been developed for voltage regulators. The SiP offers the world's lowest power dissipation of 3.8 W at 1 MHz. Its parasitic inductance is 44% lower than SiPs with the input capacitor mounted on the PCB, due to a small loop from the input capacitor to the MOSFETs, which reduces power dissipation by 25% at the same peak voltage. The high-side MOSFET die is flipped so that the drain electrode faces up, facilitating the connection of the MOSFET to the input capacitor. The lead frames and MOSFETs are connected with Cu leads, which reduce the spreading resistance of the MOSFET electrodes.read more
Citations
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Journal ArticleDOI
Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter
David Reusch,Johan Strydom +1 more
TL;DR: In this article, the effect of PCB layout parasitic inductance on efficiency and peak device voltage stress for an eGaN FET-based point of load (POL) converter operating at a switching frequency of 1 MHz, an input voltage range of 12-28 V, an output voltage of 1.2 V, and an output current up to 20 A.
Proceedings ArticleDOI
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter
David Reusch,Johan Strydom +1 more
TL;DR: In this paper, the effect of PCB layout parasitic inductance on efficiency and peak device voltage stress for an eGaN FET based point of load (POL) converter operating at a switching frequency of 1 MHz, an input voltage range of 12-28 V, an output voltage of 1.2 V, and an output current up to 20 A.
Journal ArticleDOI
High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design
Shu Ji,David Reusch,Fred C. Lee +2 more
TL;DR: In this article, the performance of high-frequency GaN point-of-load (POL) converters with 3-D copackage is discussed. And the effect of parasitics on the performance is investigated.
Proceedings ArticleDOI
Gallium Nitride based 3D integrated non-isolated point of load module
TL;DR: In this article, an integrated 3D point of load (POL) converter operating at a switching frequency of 2MHz for a 12V to 1.2V buck converter with a full load current of 20A.
Proceedings ArticleDOI
Trends of Power Electronic Packaging and Modeling
TL;DR: In this article, a review of recent advances in power electronic packaging is presented based on the development of power device integration, and the role of modeling is key to assure successful package design.
References
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A 233-MHz 80%-87% efficient four-phase DC-DC converter utilizing air-core inductors on package
Peter Hazucha,Gerhard Schrom,Jae-Hong Hahn,B. Bloechel,P. Hack,G. Dermer,Siva G. Narendra,Donald S. Gardner,Tanay Karnik,Vivek De,S. Borkar +10 more
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Proceedings ArticleDOI
A new power W-gated trench MOSFET (WMOSFET) with high switching performance
Mohamed N. Darwish,Christina Yue,Kam Hong Lui,Frederik P. Giles,Ben Chan,Kuo-In Chen,Deva Pattanayak,Qufei Chen,Kyle Santa Clara Terrill,King Owyang +9 more
TL;DR: In this paper, a power trench MOSFET with W-shaped gate structure is presented, which demonstrates a significant reduction in gate-drain charge Qgd, a low on-resistance, and good production process margin.
Journal ArticleDOI
Two-stage approach for 12-V VR
TL;DR: In this article, the authors proposed a two-stage approach for the 12-V voltage regulator, which can realize high frequency, thus reducing the output capacitance and therefore decreasing the cost.
Proceedings ArticleDOI
Two-stage voltage regulator for laptop computer CPUs and the corresponding advanced control schemes to improve light-load performance
TL;DR: In this paper, a two-stage voltage regulator for the laptop computer CPUs is presented, which achieves higher efficiency than the single-stage solution over a wide load range under the entire input voltage range.
Proceedings ArticleDOI
Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge
TL;DR: In this paper, a split-gate version of the resurf stepped oxide (RSO) MOSFET was presented, which achieved a record on-resistance of 3.8 mOmegamm2 and gate-to-drain charge of 0.9 nC.