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Open AccessJournal ArticleDOI

The quantum spin Hall effect and topological insulators

Xiao-Liang Qi, +1 more
- 01 Jan 2010 - 
- Vol. 63, Iss: 1, pp 33-38
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

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Citations
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Journal ArticleDOI

Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes

TL;DR: In this paper, the authors demonstrate a physical mechanism by which the Zeeman terms can be detected in classical transport in two-dimensional (2D) semiconductor holes, and demonstrate that the effect is very strong and tunable by means of both the density and the in-plane magnetic field.
Journal ArticleDOI

Chemical assembly and electrical characteristics of surface-rich topological insulator Bi2Se3 nanoplates and nanoribbons

TL;DR: In this paper, the synthesis of low-dimensional, surface-rich bismuth selenide nanoplates and nanoribbons through a low-pressure chemical-vapor-deposition method was demonstrated.
Book ChapterDOI

Epitaxial Growth of Bi2X3 Topological Insulators

TL;DR: In this article, the authors reviewed the use of molecular beam epitaxy technique to achieve single-crystalline Bi2X3 thin films with atomically smooth surface and extremely low-defect density.

A response theory of topological insulators

TL;DR: In this article, the authors proposed a topological response theory of topological insulators that is robust against disorder and finite magnetic field, and derived the magnetoelectric response formula in position space for a generic three-dimensional model under disorder.

Single crystal growth of intermetallic compounds with unusual low temperature properties

TL;DR: In this paper, a newly designed UHV-compatible image furnace was used to grow single crystals of twelve intermetallic compounds by vertical float-zoning, and the physical properties at low temperatures were investigated in detail for the Heusler compounds Cu2MnAl, Mn3Si, and Fe2TiSn, the B20 compounds Mn1-xFexSi and Fe1-oxCoxSi.
References
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Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI

Z-2 Topological Order and the Quantum Spin Hall Effect

TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI

Non-Abelian Anyons and Topological Quantum Computation

TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
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