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Open AccessJournal ArticleDOI

The quantum spin Hall effect and topological insulators

Xiao-Liang Qi, +1 more
- 01 Jan 2010 - 
- Vol. 63, Iss: 1, pp 33-38
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

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Citations
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Journal ArticleDOI

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect.

TL;DR: This work investigates the magneto-transport properties of Cr-doped Bi2(SexTe1-x)3 with different compositions under the effect of a gate voltage, and shows that a perpendicular electric field causes a shift in the electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and, in turn, a magnetic phase transition.
Journal ArticleDOI

Thermoelectric effects and topological insulators

TL;DR: The recent discovery of topological insulators (TIs) offers new opportunities for the development of thermoelectrics, because many TIs (such as Bi2Te3) are excellent thermolectric (TE) materials.
Journal ArticleDOI

Surface and electronic structure of epitaxial PtLuSb (001) thin films

TL;DR: In this paper, the surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied, and it was shown that the properties of these thin films are consistent with a zero-gap semiconductor or semi-metal.
Book ChapterDOI

The electronic structure of ideal graphene

TL;DR: In this article, the authors present tight-binding description of the electronic structure of single-layer and multilayer graphene, with a special emphasis on emergence of massless Dirac fermions in honeycomb lattice, effects of trigonal warping, and symmetry protection of conical points in band structure.
References
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Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI

Z-2 Topological Order and the Quantum Spin Hall Effect

TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI

Non-Abelian Anyons and Topological Quantum Computation

TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
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