The quantum spin Hall effect and topological insulators
Xiao-Liang Qi,Shou-Cheng Zhang +1 more
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.Abstract:
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.read more
Citations
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Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
Philipp Meixner,Philipp Meixner,Seong Joon Lim,Joonbum Park,Jun Sung Kim,Saskia F. Fischer,Jungpil Seo,Young Kuk +7 more
TL;DR: In this article, the authors investigated the growth of Nb on the 3D topological insulator (TI) Bi 2 Te 1.95 Se 1.05 by scanning tunneling microscopy and spectroscopy.
Journal ArticleDOI
Dynamics of spin-orbit-coupled cold atomic gases in a Floquet lattice with an impurity
TL;DR: In this paper, the authors studied the quantum tunneling of a single spin-orbit-coupled atom held in a periodically modulated optical lattice with an impurity.
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Investigation of gamma ray, electron, and neutron interaction parameters of some topological insulating materials
Gangadharayya B. Hiremath,M. M. Hosamani,A. Vinayak,P. N. Patil,S. P. Singh,Narasimha H. Ayachit,N.M. Badiger +6 more
TL;DR: In this paper , the gamma ray, neutron, and electron radiation interaction parameters were calculated for some topological insulating (TI) materials such as Sb2Te3, Bi2Se3, and Bi2Te2Se and Bi 2Te3 at various energies.
Journal ArticleDOI
Robust quantum anomalous Hall effect in a pentagonal MoS 2 monolayer grown on CuI(001) substrates
Abstract: Recently, the square planar ${\mathrm{MoS}}_{2}$ monolayer, which exhibits the Cairo pentagonal tiling (termed as $1\mathrm{P}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$), was identified as an intrinsic quantum anomalous Hall (QAH) insulator. However, there is a paucity of theoretical work concerning a suitable substrate to support its nontrivial electron transport properties, which is the prerequisite for practical applications. Here. we demonstrate that CuI(001) serves an excellent substrate candidate for epitaxial growth of the $1\mathrm{P}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$ sheet by showing that the intrinsic ferromagnetism and the QAH state of $1\mathrm{P}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$ remain unaltered in the $1\mathrm{P}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$/CuI(001) system. Further analyses of the strain effect on $1\mathrm{P}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$ reveal that the QAH is robust within a strain range from $\ensuremath{-}$ 2% to 2%. Our findings will inspire the experimental realization of QAH effects in two-dimensional (2D) pentagon-based materials.
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The Zintl phase compounds AEIn2As2 (AE = Ca, Sr, Ba): topological phase transition under pressure.
TL;DR: In this article , the authors showed that AEIn2As2 with Zintl phases will undergo insulator-metal phase transition and topological quantum phase transition under pressure modulation based on first-principles calculations.
References
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Quantum spin Hall effect in graphene
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
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Z-2 Topological Order and the Quantum Spin Hall Effect
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
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Non-Abelian Anyons and Topological Quantum Computation
TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{
u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.