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The quantum spin Hall effect and topological insulators

Xiao-Liang Qi, +1 more
- 01 Jan 2010 - 
- Vol. 63, Iss: 1, pp 33-38
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

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Citations
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Journal ArticleDOI

Growth of topological crystalline insulator SnTe thin films on Si(111) substrate by molecular beam epitaxy

TL;DR: In this paper, the growth condition for achieving high quality SnTe film was established by a combination of reflection high energy electron diffraction (RI-TEED) and scanning tunneling microscopy (STM) studies.
Posted Content

Weak-antilocalization and Surface Dominated Transport in Topological Insulator Bi2Se2Te

TL;DR: In this paper, the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique was investigated and the films were characterised using various techniques for phase and composition.
Journal ArticleDOI

Encapsulated Silicene: A Robust Large-Gap Topological Insulator

TL;DR: First-principles calculations show that encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.
Journal ArticleDOI

Quantum Hall effect in a singly and doubly connected three-dimensional topological insulator

TL;DR: In this article, the surface states of topological insulators, which behave as charged massless Dirac fermions, are studied in the presence of a quantizing uniform magnetic field.
References
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Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI

Z-2 Topological Order and the Quantum Spin Hall Effect

TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI

Non-Abelian Anyons and Topological Quantum Computation

TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
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