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Open AccessJournal ArticleDOI

The quantum spin Hall effect and topological insulators

Xiao-Liang Qi, +1 more
- 01 Jan 2010 - 
- Vol. 63, Iss: 1, pp 33-38
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

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Citations
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Journal ArticleDOI

Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates.

TL;DR: Gate-tunable surface conduction in Na-doped Bi(2)Te(3) topological insulator nanoplates is reported, and by applying external gate voltages, suchTopological insulators can be tuned from p-type to n-type, rendering a promise in finding novel topology insulators with enhanced surface states.
Journal ArticleDOI

Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

TL;DR: In this article, the epitaxial growth of Bi2Se3 thin films on Si (111) substrate, using molecular beam epitaxy (MBE), has been reported, and the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers.
Journal ArticleDOI

Simplified Topological Invariants for Interacting Insulators

TL;DR: Using topological invariants to classify and understand topological insulators is as natural and as fundamental as using genus to distinguish spheres from tea pots as discussed by the authors. But the problem of computing topology invariants for insulators with electron-electron interactions is difficult.
Journal ArticleDOI

Molecular beam epitaxial growth of topological insulators.

TL;DR: Molecular beam epitaxy technique was shown to not only provide an excellent method to prepare high quality topological insulators but show possibilities of engineering their electronic and spin structures as well, which is of significant importance for potential applications of topology insulators based on well-developed Si technology.
Journal ArticleDOI

Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy

TL;DR: In this paper, the authors reported the first controlled mechanical exfoliation of Bi2Se3 nanoribbons by an atomic force microscope (AFM) tip down to a single QL.
References
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Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI

Z-2 Topological Order and the Quantum Spin Hall Effect

TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI

Non-Abelian Anyons and Topological Quantum Computation

TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
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