The quantum spin Hall effect and topological insulators
Xiao-Liang Qi,Shou-Cheng Zhang +1 more
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.Abstract:
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.read more
Citations
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Book ChapterDOI
Topological Insulators with Ultracold Atoms
Indubala I. Satija,Erhai Zhao +1 more
TL;DR: In this paper, the authors introduce the concept of topological insulators, materials that are insulating in the interior but conduct along the edges of the material, such as Quantum Hall and its close cousin Quantum Spin Hall states.
Spin structures, theta functions and topological insulators
TL;DR: In this paper, a relationship between topological insulators and spin structures on Riemann surfaces, along with their theta function interpretation, via Quillen's determinant bundle, is investigated.
Journal ArticleDOI
Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates
TL;DR: In this article , the twin-free molecular beam epitaxial Bi2Se3 and Sb2Te3 structures on ultra-thin In2Se 3 layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source.
Journal ArticleDOI
Large band gap quantum spin Hall insulators in plumbene monolayer decorated with amidogen, hydroxyl and thiol functional groups
TL;DR: In this article , three new QSH phases in plumbene have been theoretically predicted through functionalization with amidogen (NH2), hydroxyl (OH) and thiol (SH) groups.
Posted Content
Characteristic nonlinear electromagnetic response of a Dirac Ring
TL;DR: In this article, the authors show that negative differential resistance also arises in Dirac ring systems, an example of which has been experimentally observed in the surface states of Bi2Se3 Topological Insulators.
References
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Journal ArticleDOI
Quantum spin Hall effect in graphene
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI
Z-2 Topological Order and the Quantum Spin Hall Effect
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI
Non-Abelian Anyons and Topological Quantum Computation
TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{
u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.