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Open AccessJournal ArticleDOI

The quantum spin Hall effect and topological insulators

Xiao-Liang Qi, +1 more
- 01 Jan 2010 - 
- Vol. 63, Iss: 1, pp 33-38
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

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Citations
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Journal ArticleDOI

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

TL;DR: In this paper, the epitaxial growth of single-crystalline CdTe(100) thin films on GaAs (100) substrates using molecular beam epitaxy was investigated.
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Light Manipulation by Plasmonic Nanostructures

Wei Liu
TL;DR: In this paper, the authors studied various effects related to the excitation of surface plasmons in different kinds of plasmonic nanostructures and proposed a new mechanism to achieve complete spectral gaps without periodicity along the propagation direction.

Spin-Resolved Valence Photoemission

TL;DR: Spin-resolved valence photoemission has recently seen a resurgence of interest fostered by exciting results in a range of interesting materials as mentioned in this paper, including thin films, half-metals, adsorbates and induced moments.
Journal ArticleDOI

Interfacial charge current in a magnetised/normal graphene junction

TL;DR: In this paper, the authors theoretically investigate a possible interfacial charge current flowing in a magnetized/normal graphene junction where both the intrinsic and extrinsic spin-orbit coupling (SOC) is considered in the normal graphene.
References
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Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI

Z-2 Topological Order and the Quantum Spin Hall Effect

TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI

Non-Abelian Anyons and Topological Quantum Computation

TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
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