The quantum spin Hall effect and topological insulators
Xiao-Liang Qi,Shou-Cheng Zhang +1 more
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.Abstract:
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.read more
Citations
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Disordered topological insulators: a non-commutative geometry perspective
TL;DR: In this paper, a review of the topological properties of strongly disordered topological insulators is presented, where the analytic theory of the Chern number is used to define topological invariants in the presence of strong disorder.
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Topological electronic structure and Weyl semimetal in the TlBiSe 2 class of semiconductors
TL;DR: In this article, the authors present an analysis of bulk and surface electronic structures of thallium-based ternary III-V-VI-series of compounds TlMQ${}_{2}$, where the ab initio density functional theory framework is used.
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Electrical polarization and orbital magnetization: the modern theories.
TL;DR: Both theories of polarization and magnetization are reviewed on a uniform ground in a density functional theory (DFT) framework, pointing out analogies and differences.
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Quantum spin hall insulators in strain-modified arsenene
TL;DR: The results provide a promising strategy for designing 2D TIs with large bulk gaps from commonly used materials and indicate the quantum spin Hall effect in arsenene at appropriate strains.
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Theoretical study of the dynamics of magnetization on the topological surface
TL;DR: In this paper, the dynamics of magnetization coupled to the surface Dirac fermions of a three-dimensional topological insulator were investigated theoretically by deriving the Landau-Lifshitz-Gilbert (LLG) equation in the presence of charge current.
References
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Quantum spin Hall effect in graphene
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
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Z-2 Topological Order and the Quantum Spin Hall Effect
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
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Non-Abelian Anyons and Topological Quantum Computation
TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{
u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.