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Open AccessJournal ArticleDOI

The quantum spin Hall effect and topological insulators

Xiao-Liang Qi, +1 more
- 01 Jan 2010 - 
- Vol. 63, Iss: 1, pp 33-38
TLDR
In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract
In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

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Citations
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Journal ArticleDOI

Recent advances in the spin Hall effect of light

TL;DR: This review, based on the viewpoint of the geometric phase gradient, gives a detailed presentation of the recent advances in the SHE of light and its applications in precision metrology and future spin-based photonics.
Journal ArticleDOI

Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

TL;DR: This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.
Journal ArticleDOI

Emergent functions of quantum materials

TL;DR: Topology and collective phenomena give quantum materials emergent functions that provide a platform for developing next-generation quantum technologies, as surveyed in this paper, where the authors present a review of their work.
Journal ArticleDOI

Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi 2 Se 3

TL;DR: In this article, a number of transport properties in topological insulator (TI) Bi{}_{2}$Se${}_{3}$ exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm--170 \ensuremath{\mu}m).
References
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Journal ArticleDOI

Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI

Z-2 Topological Order and the Quantum Spin Hall Effect

TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI

Non-Abelian Anyons and Topological Quantum Computation

TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
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