Journal ArticleDOI
Thermal analysis of high power LED packages under the alternating current operation
Moo Whan Shin,Sun Ho Jang +1 more
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TLDR
In this article, the authors describe a novel thermal characterization method of GaN-based Light Emitting Diode (LED) package driven under the Alternating Current (AC) mode.Abstract:
In this paper we describe a novel thermal characterization method of GaN-based Light Emitting Diode (LED) package driven under the Alternating Current (AC) mode. The result was compared with the results from the thermal analysis for LED package operated under the Direct Current (DC) condition. Different from the DC condition, the junction temperature rise with the operation time of LED package was exhibited in a band formation. Finite Volume Method (FVM) was utilized to calculate the thermal performance of LED package under the AC condition using the input power extracted from the output current and voltage from the AC power supply. The experimental result was in a good agreement with the simulation data.read more
Citations
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Journal ArticleDOI
Pore characteristics for improving luminous efficacy of phosphor-in-glass.
TL;DR: It is found that PIGs sintered within a given viscosity range exhibit different optical properties depending on their pore size and overall porosity; a higher luminous efficacy observed in the case of intermediate scattering length values was due to an improved interaction between pores and light.
Journal ArticleDOI
High-power UV-LED degradation: Continuous and cycled working condition influence
TL;DR: In this paper, a reliability study of 3-W UV-LEDs with special focus on LED degradation for two working conditions: continuous and cycled (30 s ON and 30 s OFF).
Journal ArticleDOI
Analysis of three different junction temperature estimation methods for AC LEDs
TL;DR: In this paper, the junction temperature of an AC LED was estimated using voltage drop and peak emission wavelength shift (PEWSH) methods, and the measured junction temperature results were compared to results obtained using the voltage drop method for AC LEDs.
Journal ArticleDOI
Optical and frequency degradation behavior of GaN-based micro-LEDs for visible light communication.
TL;DR: The results show that micro-LEDs under AC mode have better reliability because of the decreased junction temperature, but the high current density would still generate some defects within or around the active region, which can increase the trap-assisted tunneling (TAT) current and non-radiative recombination.
Journal ArticleDOI
A Bipolar-Pulse Voltage Method for Junction Temperature Measurement of Alternating Current Light-Emitting Diodes
Honghui Zhu,Yijun Lu,Tingzhu Wu,Ziquan Guo,Lihong Zhu,Xiao Jingjing,Yi Tu,Yulin Gao,Yue Lin,Zhong Chen +9 more
TL;DR: In this paper, a new method for measuring the junction temperature of alternating current light-emitting diodes was proposed, which employs a periodic bipolar voltage pulse signal as the input, and utilizes the amplitude of corresponding output current as the temperature sensitive parameter.
References
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Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Journal ArticleDOI
On the representation of infinite-length distributed RC one-ports
TL;DR: In this paper, the dipole intensity function and the time-constant density of RC one-port networks are introduced for the identification and synthesis of distributed RC networks, and the results can also be applied directly for inductance-resistance networks.
Journal ArticleDOI
Thermal analysis of LED array system with heat pipe
TL;DR: In this article, the junction temperatures of high power LED arrays with and without heat pipe at the same air velocity of 7 m/s were reported to be 87.6 °C and 63.3 °C, respectively.
Journal ArticleDOI
Thermal Resistance Measurement of LED Package with Multichips
Lan Kim,Moo Whan Shin +1 more
TL;DR: In this article, the thermal transient measurements of high-power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the literature.
Journal ArticleDOI
GaN alternating current light‐emitting device
TL;DR: In this paper, a new type alternating current driven light-emitting device (AC LED) can increase the radition area in each bias direction to improve the device efficiency by the Wheatstone Bridge (WB) circuit design.
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