Journal ArticleDOI
Transition of photoconductive and photovoltaic operation modes in amorphous Ga 2 O 3 -based solar-blind detectors tuned by oxygen vacancies
Yanfang Zhang,Yanfang Zhang,Xuanhu Chen,Yang Xu,Fang-Fang Ren,Shulin Gu,Rong Zhang,Youdou Zheng,Jiandong Ye +8 more
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This article is published in Chinese Physics B.The article was published on 2019-02-01. It has received 23 citations till now. The article focuses on the topics: Amorphous solid.read more
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Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions
Kuang-Hui Li,Nasir Alfaraj,Chun Hong Kang,Laurentiu Braic,Mohamed N. Hedhili,Zaibing Guo,Tien Khee Ng,Boon S. Ooi +7 more
TL;DR: This work investigates the thin-film growth of a heterostructure stack comprised of n-type β-Ga2O3 and p-type cubic NiO layers grown consecutively on c-plane sapphire using pulsed laser deposition, as well as the fabrication of solar-blind ultraviolet-C photodetectors based on the resulting p-n junction heterodiodes.
Journal ArticleDOI
Gallium oxide-based solar-blind ultraviolet photodetectors
Journal ArticleDOI
Carrier Transport and Gain Mechanisms in $\beta$ –Ga 2 O 3 -Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors
Yang Xu,Xuanhu Chen,Dong Zhou,Fang-Fang Ren,Jianjun Zhou,Song Bai,Hai Lu,Shulin Gu,Rong Zhang,Youdou Zheng,Jiandong Ye +10 more
TL;DR: In this article, the carrier transport and gain mechanisms are exploited in the Ga2O3-based metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts.
Journal ArticleDOI
Performance improvement of amorphous Ga2O3 ultraviolet photodetector by annealing under oxygen atmosphere
Changqi Zhou,Kewei Liu,Xing Chen,Jiaheng Feng,Jialin Yang,Zhenzhong Zhang,Lei Liu,Yang Xia,Dezhen Shen +8 more
TL;DR: In this article, the effect of annealing under oxygen atmosphere on the performance of a-Ga2O3 photodetectors was investigated, and the authors demonstrated the fast-speed and high-rejection-ratio solar-blind ultraviolet (UV) photoderysector based on amorphous Ga2O-3 (a-Ga 2O3) films grown by atomic layer deposition.
Journal ArticleDOI
Solar-Blind Self-Powered Photodetector Using Solution-Processed Amorphous Core-Shell Gallium Oxide Nanoparticles.
TL;DR: The synthesis of novel core-shell amorphous gallium oxide NP (a-Ga2Ox/GaOx NPs) that have not been previously obtained paves the way for large-scale industrial application of the WBGS.
References
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Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
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Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides.
Stephan Lany,Alex Zunger +1 more
TL;DR: The theoretical defect model for In(2)O(3) and ZnO finds that intrinsic acceptors have a high Delta H explaining high n-dopability, and the O vacancy V(O) has a metastable shallow state, explaining the paradoxical coexistence of coloration and conductivity.
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Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
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A Review on Conduction Mechanisms in Dielectric Films
TL;DR: In this article, the analytical methods of conduction mechanisms in dielectric films are discussed in detail, including the trap level, the trap spacing, trap density, the carrier drift mobility, and the relaxations in the conduction band.
Journal ArticleDOI
Graphene-β-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
TL;DR: Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.