Tunable and stable in time ferroelectric imprint through polarization coupling
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TLDR
In this article, a method to tune a ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarities of PbZrxTi(1−x)O3, was demonstrated.Abstract:
Here we demonstrate a method to tune a ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarization of PbZrxTi(1−x)O3. SrRuO3/PbZrxTi(1−x)O3/ZnO/SrRuO3 heterostructures were grown with different ZnO thicknesses. It is shown that the coercive voltages and ferroelectric imprint vary linearly with the thickness of ZnO. It is also demonstrated that the ferroelectric imprint remains stable with electric field cycling and electric field stress assisted agingread more
Citations
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Journal ArticleDOI
In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device.
Ki Chang Kwon,Ki Chang Kwon,Yishu Zhang,Lin Wang,Wei Yu,Xiaojie Wang,In-Hyeok Park,Hwa Seob Choi,Hwa Seob Choi,Teng Ma,Ziyu Zhu,Bingbing Tian,Chenliang Su,Kian Ping Loh,Kian Ping Loh +14 more
TL;DR: It is demonstrated that Tin monosulfide films less than 6 nm thick shows optimum performance as semiconductor channel in in-plane ferro electric analogue synaptic device, whereas thicker films have much poorer ferroelectric response due to screening effects by a higher concentration of charge carriers.
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Local control of defects and switching properties in ferroelectric thin films
Sahar Saremi,Ruijuan Xu,Frances I. Allen,Joshua Maher,Joshua C. Agar,Ran Gao,Peter Hosemann,Lane W. Martin,Lane W. Martin +8 more
TL;DR: In this article, the role of point defects in ferroelectric-polarization switching was investigated and the authors provided systematic experimental evidence that point defects can be used to deterministically create and spatially locate point defects, resulting in small and symmetric changes in the coercive field.
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Multistability in Bistable Ferroelectric Materials toward Adaptive Applications
TL;DR: In this article, it is shown that by locally controlling the nucleation energy distribution at the ferroelectric-electrode interface multiple-addressable states in a ferroelectric can be created, which is necessary for adaptive/synaptic applications.
Journal ArticleDOI
Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers.
José Silva,José Silva,Jun Wang,Gertjan Koster,Guus Rijnders,Raluca Negrea,Corneliu Ghica,Koppole C. Sekhar,J. Agostinho Moreira,M. J. M. Gomes +9 more
TL;DR: A bridge is built between the hysteretic behavior observed either in the C- E and current-electric field characteristics on a MFS structure and the current characteristics of the BCZT/ZnO bilayers in a metal-ferroelectric-semiconductor (MFS) configuration.
Journal ArticleDOI
Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films
José Silva,José Silva,Koppole Kamakshi,Raluca Negrea,Corneliu Ghica,Jun Wang,Gertjan Koster,Guus Rijnders,F. Figueiras,F. Figueiras,Mário Pereira,M. J. M. Gomes +11 more
TL;DR: In this article, the effect of electric field on polarization switching kinetics has been investigated and has been analyzed by the nucleation limited switching model with a Lorentzian distribution function.
References
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TL;DR: In this paper, the memory retention and switching behavior of a metal-ferroelectric-semiconductor transistor using bismuth titanate have been investigated, and it was shown that the device has a fast switching speed and a switching threshold at a field of about 15 to 20 kV/cm.
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TL;DR: In this article, a ferroelectric-like hysteresis loop is obtained for a nonferroelectric system consisting of two back-to-back metal-semiconductor Schottky contacts with a large concentration of traps distributed over a finite thickness near the electrodes.
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The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films. II. Numerical simulation and verification
TL;DR: In this article, different screening mechanisms such as charge injection from the electrodes into the film as well as charge separation within the surface layer are considered by implementing a numerical simulation based on the different screening mechanism.
Journal ArticleDOI
Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories
TL;DR: In this article, an analytical theory of the injection scenario of imprint is developed and the charge accumulation at the interface is shown to provoke a voltage offset and polarization loss which are nonlinearly dependent on the time in logarithmic scale.
Journal ArticleDOI
Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films
Minh D. Nguyen,Matthijn Dekkers,Evert Pieter Houwman,Ruud Johannes Antonius Steenwelle,X. Wan,Andreas Roelofs,Thorsten Schmitz-Kempen,Guus Rijnders +7 more
TL;DR: In this paper, the effects of residual strain in Pb(Zr0.52Ti0.48)O3 capacitors on the ferroelectric and piezoelectric properties were investigated.