Tunable and stable in time ferroelectric imprint through polarization coupling
TLDR
In this article, a method to tune a ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarities of PbZrxTi(1−x)O3, was demonstrated.Abstract:
Here we demonstrate a method to tune a ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarization of PbZrxTi(1−x)O3. SrRuO3/PbZrxTi(1−x)O3/ZnO/SrRuO3 heterostructures were grown with different ZnO thicknesses. It is shown that the coercive voltages and ferroelectric imprint vary linearly with the thickness of ZnO. It is also demonstrated that the ferroelectric imprint remains stable with electric field cycling and electric field stress assisted agingread more
Citations
More filters
Journal ArticleDOI
Manipulating the magnetism and resistance state of Mn:ZnO/Pb(Zr0.52Ti0.48)O3 heterostructured films through electric fields
TL;DR: In this article, an effective method for modulating the magnetism of magnetic semiconductors and providing a promising avenue for multifunctional devices with both electric and magnetic functionalities is presented.
Journal ArticleDOI
Enhanced ferroelectric polarization in epitaxial superconducting–ferroelectric heterostructure for non-volatile memory cell
Ravikant,Ravikant,Ravikant,Charanjeet Singh,Charanjeet Singh,Anjali Panchwanee,R. K. Rakshit,R. K. Rakshit,Manju Singh,Manju Singh,V. R. Reddy,Ram Janay Choudhary,V.N. Ojha,V.N. Ojha,Ashok Kumar,Ashok Kumar +15 more
TL;DR: In this article, the growth and polarization switching properties of epitaxial ferroelectric-superconducting heterostructure PbZr0.52Ti0.48O3 (PZT) (100 nm)/YBa2Cu3O7−δ (YBCO) thin films for nonvolatile RF random access memory elements are reported.
Journal ArticleDOI
Domain nucleation behavior in ferroelectric films with thin and ultrathin top electrodes versus insulating top layers
TL;DR: In this paper, the effect of varying the thickness of Pt top electrodes made by the electron beam induced deposition technique on the domain nucleation characteristics of Pb(Zr,Ti)O 3 films has been investigated by piezoresponse force microscopy.
Journal ArticleDOI
Optoelectronic Memory Capacitor Based on Manipulation of Ferroelectric Properties.
TL;DR: In this paper, an optoelectronic memcapacitor (memory capacitor) was fabricated by manipulation of ferroelectric properties through the ferro-electric-semiconductor interface based on a ZnO/PZT (Pb1.0.52Ti0.48)O3) capacitor.
Journal ArticleDOI
Lead Zirconium Titanate (PZT)-Based Gate-All-Around Negative-Capacitance Junctionless Nanowire FET for Distortionless Low-Power Applications
TL;DR: In this paper, a negative-capacitance (NC)-induced junctionless gate-all-around (GAA) nanowire field effect transistor (FET) is proposed by deploying the ferroelectric material (FE) lead zirconium titanate (PZT) between the gate electrode and metal, referred to as the NC JLNWFET.
References
More filters
Journal ArticleDOI
Fundamentals of zinc oxide as a semiconductor
TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
Journal ArticleDOI
Switchable ferroelectric diode and photovoltaic effect in BiFeO3.
TL;DR: It is found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional.
Journal ArticleDOI
Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
Journal ArticleDOI
A ferroelectric memristor
André Chanthbouala,Vincent Garcia,Ryan O. Cherifi,Karim Bouzehouane,Stéphane Fusil,Stéphane Fusil,Xavier Moya,Stéphane Xavier,Hiroyuki Yamada,Hiroyuki Yamada,Cyrile Deranlot,Neil D. Mathur,Manuel Bibes,Agnès Barthélémy,Julie Grollier +14 more
TL;DR: It is demonstrated that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed.