Journal ArticleDOI
Ultraviolet detectors in thin sputtered ZnO films.
TLDR
Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thin sputtered layer of ZnO and Au by optimizing the sputtering parameters and the IV characteristics and the sensitivity spectra were investigated.Abstract:
Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thin sputtered layer of ZnO and Au. The sputtering parameters for the ZnO layer were optimized. The IV characteristics and the sensitivity spectra of the ZnO–Au photodiodes were investigated.read more
Citations
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Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Wide-bandgap semiconductor ultraviolet photodetectors
TL;DR: In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.
Journal ArticleDOI
ZnO Schottky ultraviolet photodetectors
TL;DR: In this paper, the results of Schottky UV photodetectors fabricated on n-type ZnO epitaxial films were presented, which were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition.
Journal ArticleDOI
ZnO-Based Ultraviolet Photodetectors
TL;DR: The performance of ZnO-based photodetectors is analyzed, discussing recent achievements, and comparing the characteristics of the variousPhotodetector structures developed to date.
Journal ArticleDOI
Optical properties of sputter-deposited ZnO:Al thin films
TL;DR: In this article, an effective mass model for n-doped semiconductors is proposed for n−doped polysilicon, where the Al atoms act as pointlike Coulomb scatterers and are screened by the electrons acco...
References
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Journal ArticleDOI
Measurements of adherence of residually stressed thin films by indentation. II. Experiments with ZnO/Si
TL;DR: In this article, a change in crack path from the interface to the film, accompanied by an increase in crack radius, is observed and interpreted as a buckling-induced stress intensification.
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Surface barriers on ZnSe and ZnO
TL;DR: In this article, surface barrier measurements of several metals on vacuum cleaved ZnSe and ZnO surfaces are reported, indicating that both of these materials behave as expected for materials without surface states.
Journal ArticleDOI
Zinc-oxide thin-film surface-wave transducers
TL;DR: In this paper, the authors summarized a body of knowledge which has been developed on the characteristics of transducer quality ZnO film layers, and focused attention on those sputtering parameters and microstructural properties which characterize a superior surface-wave transducers.
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Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental Parameters
TL;DR: In this article, the degree of self-compensation in a binary semiconductor is used to obtain a useful correlation between the degree by singly ionized natural defects and the ratio of the electronic energy gap to certain generally known thermodynamic quantities.
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Studies of the optimum conditions for growth of rf‐sputtered ZnO films
TL;DR: In this paper, a technique for deposition of highly oriented rf−sputtered zinc oxide films on (111) gold, ( 111) silicon, (0001) sapphire, and fused quartz is described.