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Open AccessJournal ArticleDOI

Van der Waals heterostructures

Andre K. Geim, +1 more
- 25 Jul 2013 - 
- Vol. 499, Iss: 7459, pp 419-425
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TLDR
With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Abstract
Fabrication techniques developed for graphene research allow the disassembly of many layered crystals (so-called van der Waals materials) into individual atomic planes and their reassembly into designer heterostructures, which reveal new properties and phenomena. Andre Geim and Irina Grigorieva offer a forward-looking review of the potential of layering two-dimensional materials into novel heterostructures held together by weak van der Waals interactions. Dozens of these one-atom- or one-molecule-thick crystals are known. Graphene has already been well studied but others, such as monolayers of hexagonal boron nitride, MoS2, WSe2, graphane, fluorographene, mica and silicene are attracting increasing interest. There are many other monolayers yet to be examined of course, and the possibility of combining graphene with other crystals adds even further options, offering exciting new opportunities for scientific exploration and technological innovation. Research on graphene and other two-dimensional atomic crystals is intense and is likely to remain one of the leading topics in condensed matter physics and materials science for many years. Looking beyond this field, isolated atomic planes can also be reassembled into designer heterostructures made layer by layer in a precisely chosen sequence. The first, already remarkably complex, such heterostructures (often referred to as ‘van der Waals’) have recently been fabricated and investigated, revealing unusual properties and new phenomena. Here we review this emerging research area and identify possible future directions. With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.

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Citations
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Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

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Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

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Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.

TL;DR: Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material and ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported.
References
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