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Open AccessJournal ArticleDOI

Vapor–Solid Growth of High Optical Quality MoS2 Monolayers with Near-Unity Valley Polarization

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TLDR
A new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 μm in size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor-solid growth mechanism is reported.
Abstract
Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated in mechanically exfoliated monolayer MoS2 samples by polarization-resolved photoluminescence, although polarization has rarely been seen at room temperature. Here we report a new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 μm in size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor–solid growth mechanism. The technique is simple and reliable, and the optical quality of the crystals is extremely high, as demonstrated by the fact that the valley polarization approaches unity at 30 K and persists at 35% even at room tempe...

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Citations
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Journal ArticleDOI

Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

TL;DR: It is demonstrated that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2, and their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface.
Journal ArticleDOI

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

TL;DR: The recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices are reviewed.
Journal ArticleDOI

Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

TL;DR: This tutorial review will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches, and shows great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties.
Journal ArticleDOI

Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition.

TL;DR: This work developed an approach for synthesizing MoS2 flakes in rhomboid shape with controlled number of layers by the layer-by-layer sulfurization of MoO2 microcrystals, which showed high crystallinity with crystal domain size of ~10 μm, significantly larger than the grain size ofMoS2 grown by other methods.
Journal ArticleDOI

Role of the seeding promoter in MoS2 growth by chemical vapor deposition.

TL;DR: The thinnest semiconductor, molybdenum disulfide (MoS2) monolayer, exhibits promising prospects in the applications of optoelectronics and valleytronics and is found that an optimized concentration of seed molecules is helpful for the nucleation of the MoS2.
References
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Journal ArticleDOI

Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI

Single-layer MoS2 transistors

TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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