Vapor–Solid Growth of High Optical Quality MoS2 Monolayers with Near-Unity Valley Polarization
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TLDR
A new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 μm in size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor-solid growth mechanism is reported.Abstract:
Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated in mechanically exfoliated monolayer MoS2 samples by polarization-resolved photoluminescence, although polarization has rarely been seen at room temperature. Here we report a new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 μm in size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor–solid growth mechanism. The technique is simple and reliable, and the optical quality of the crystals is extremely high, as demonstrated by the fact that the valley polarization approaches unity at 30 K and persists at 35% even at room tempe...read more
Citations
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Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors.
TL;DR: A centimeter-scale phototransistor prepared using the G-MoS2/graphene heterostructure exhibited a high responsivity of 32 mA/W with good cycling stability; this value is 1 order of magnitude higher than that of transferred MoS2 on graphene.
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Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides
Manoj K. Jana,C. N. R. Rao +1 more
TL;DR: Various aspects of layered analogues of graphene as exemplified by layered transition metal dichalcogenides (TMDCs) are presented.
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Recent advances on the preparation and electrochemical analysis of MoS2-based materials for supercapacitor applications: A mini-review
TL;DR: In this paper, a mini-review of the wet-chemical methods of preparing MoS2 and their electrochemical properties were summarized, and it was suggested that the modified methods of preparation and appropriate composite materials can enhance the supercapacitor properties of MoS 2 based materials.
Journal ArticleDOI
Layer-transferred MoS2/GaN PN diodes
Edwin W. Lee,Choong Hee Lee,Pran K. Paul,Lu Ma,William D. McCulloch,Sriram Krishnamoorthy,Yiying Wu,Aaron R. Arehart,Siddharth Rajan +8 more
TL;DR: In this article, a two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2)/n-GaN) heterojunction diodes are reported.
Journal ArticleDOI
Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire
Kenshiro Suenaga,Hyun Goo Ji,Yung-Chang Lin,Tom Vincent,Mina Maruyama,Adha Sukma Aji,Yoshihiro Shiratsuchi,Dong Ding,Kenji Kawahara,Susumu Okada,Vishal Panchal,Olga Kazakova,Hiroki Hibino,Kazu Suenaga,Hiroki Ago +14 more
TL;DR: The controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration is demonstrated.
References
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Journal ArticleDOI
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
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TL;DR: It is shown that WS2 and MoS2 effectively reinforce polymers, whereas WS2/carbon nanotube hybrid films have high conductivity, leading to promising thermoelectric properties.