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Vapor–Solid Growth of High Optical Quality MoS2 Monolayers with Near-Unity Valley Polarization

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TLDR
A new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 μm in size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor-solid growth mechanism is reported.
Abstract
Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated in mechanically exfoliated monolayer MoS2 samples by polarization-resolved photoluminescence, although polarization has rarely been seen at room temperature. Here we report a new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 μm in size on a variety of standard insulating substrates (SiO2, sapphire, and glass) using a catalyst-free vapor–solid growth mechanism. The technique is simple and reliable, and the optical quality of the crystals is extremely high, as demonstrated by the fact that the valley polarization approaches unity at 30 K and persists at 35% even at room tempe...

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Citations
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Journal ArticleDOI

Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors.

TL;DR: A centimeter-scale phototransistor prepared using the G-MoS2/graphene heterostructure exhibited a high responsivity of 32 mA/W with good cycling stability; this value is 1 order of magnitude higher than that of transferred MoS2 on graphene.
Journal ArticleDOI

Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides

TL;DR: Various aspects of layered analogues of graphene as exemplified by layered transition metal dichalcogenides (TMDCs) are presented.
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Recent advances on the preparation and electrochemical analysis of MoS2-based materials for supercapacitor applications: A mini-review

TL;DR: In this paper, a mini-review of the wet-chemical methods of preparing MoS2 and their electrochemical properties were summarized, and it was suggested that the modified methods of preparation and appropriate composite materials can enhance the supercapacitor properties of MoS 2 based materials.
Journal ArticleDOI

Layer-transferred MoS2/GaN PN diodes

TL;DR: In this article, a two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2)/n-GaN) heterojunction diodes are reported.
References
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Journal ArticleDOI

Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Single-layer MoS2 transistors

TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Emerging Photoluminescence in Monolayer MoS2

TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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