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These results are especially important for new generations of power switching transistors.
The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
Proceedings ArticleDOI
Sun Shuo, Arindam Basu 
19 Dec 2011
13 Citations
This allows us to identify the most critical transistors that need to be matched.
This latter finding sets a limitation on the maximum spacer depth for the high performance bipolar transistors.
In this paper, we arrive at a better trade-off between the two, by realizing a marginally increased speed performance through a small rise in the number of transistors.
The obtained results demonstrate a potential of this technique for development of the next-generation high-power transistors.
A 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process.
Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.
Journal ArticleDOI
Qin Zhang, Wei Zhao, Alan Seabaugh 
555 Citations
This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors.