Showing papers on "Antimonide published in 2019"
16 Aug 2019
TL;DR: Antimonide-Based Quantum Heterostructure Devices 4. Mid-Infrared Strained Diode Lasers 5. inAs/inAs,Sb,x Type-II Superlattice Midwave Infrared Lasers as mentioned in this paper.
Abstract: 1. Interfacial Disorder in inAs/GaSb Heterostructures Grown by Molecular Beam Epitaxy 2. Type II (A1Ga)Sb/inAs Quantum Well Structures and Superlattices for Opto- and Micro-Electronics Grown by Molecular Beam Epitaxy 3. Antimonide-Based Quantum Heterostructure Devices 4. Mid-Infrared Strained Diode Lasers 5. Mid-Wave Infrared Sources Based on GainSb/inAs Superlattice Active Layers 6. inAs/inAs,Sb,x Type-II Superlattice Midwave Infrared Lasers 7. Growth and Characterization of inAs/A1Sb/GaSb Heterostructures 8. Structural and Electrical Properties of GaSb/inSb and inAS/inSb Superlattices 9. Antimonide-Based Mid-Infrared Quantum-Well Diode Lasers
40 citations
TL;DR: Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers using graphene/tetraethyl orthosilicate region are demonstrated.
Abstract: Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers are demonstrated. A graphene/p-indium antimonide (InSb) heterojunction and graphene/insulator region were formed. The injected photo-carriers from InSb to graphene were amplified by photo-gating induced in the graphene/tetraethyl orthosilicate (TEOS) region, resulting in the high responsivity and low dark current performance. A responsivity of 14.9 A/W and an ON/OFF ratio of 2.66×104 were achieved. The photoresponse is shown to be determined by the cross-sectional area between the graphene and the TEOS-SiO2, in which the injected photo-carriers into graphene were modulated and amplified by the photo-gating effect. Our results indicate that high-performance IR photodetectors based on the developed graphene photodetectors can be realized.
21 citations
TL;DR: In this paper, the electronic and phonon transport properties of graphene-like boron phosphide (BP), Boron arsenide (BAs), and BSb monolayers were investigated using first-principles calculations combined with the Boltzmann theory.
Abstract: The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations combined with the Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress the phonon relaxation time but hardly affect that of electron. As a consequence, both systems exhibit comparable power factors with that of the BP monolayer but much lower lattice thermal conductivities. Accordingly, a maximum ZT value above 3.0 can be realized in both BAs and BSb monolayers at optimized carrier concentration. Interestingly, very similar p - and n-type thermoelectric performance is observed in the BSb monolayer along the zigzag direction, which is of vital importance in the fabrication of thermoelectric modules with comparable efficiencies.
16 citations
TL;DR: The pnictides Eu14AlAs11 and Eu 14AlSb11 were synthesized from the elements in sealed niobium ampoules and crystallized in the tetragonal crystal system as discussed by the authors.
Abstract: The pnictides Eu14AlAs11 and Eu14AlSb11 were synthesized from the elements in sealed niobium ampoules. They crystallize in the tetragonal crystal system (Eu14AlAs11: a = 1627.6(2), c = 2180.0(4) pm; Eu14AlSb11: a = 1725.6(2), c = 2289.7(7) pm) with space group I41/acd, isostructural to Ca14AlSb11 and can be described as Zintl phases. The Al atoms are surrounded by four pnictogen atoms, forming [AlPn4]9− tetrahedra. Additionally isolated Pn3− anions and linear Pn37− trimers can be found in the crystal structure. The compounds can be described according to (Eu2+)14(AlPn9−)(Pn3−)4(Pn37−). Eu14AlAs11 and Eu14AlSb11 both exhibit an antiferromagnetic transition at TN = 10.5(1) K and 12.5(1) K, respectively. For the antimonide, the magnetic transition has been confirmed by additional heat capacity measurements. Resistivity investigations indicate that Eu14AlSb11 is a semiconductor with a band gap of Eg = 0.28(5) eV close to room temperature. According to the Zintl formalism, the Eu atoms are divalent, which has been confirmed by magnetic susceptibility and additional 151Eu Mossbauer spectroscopic studies. The measurements conducted at 6 K, below the magnetic ordering temperature, show a full hyperfine field splitting with complex spectra underlining the recorded magnetic data. Furthermore, 121Sb Mossbauer spectroscopic studies have been conducted to study the different antimonide entities in the title compounds.
14 citations
07 May 2019
TL;DR: In this article, the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices.
Abstract: Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).
13 citations
TL;DR: In this paper, the colloidal synthesis of AlSb quantum dots (QDs) for the first time was reported, which showed excitonic transitions in the UV-A region and a tunable band-edge emission in the blue spectral range.
Abstract: AlSb is a less studied member of the III–V semiconductor family, and herein, we report the colloidal synthesis of AlSb quantum dots (QDs) for the first time. Different sizes of colloidal AlSb QDs (5 to 9 nm) were produced by the controlled reaction of AlCl3 and Sb[N(Si(Me)3)2]3 in the presence of superhydride. These colloidal AlSb quantum dots showed excitonic transitions in the UV-A region and a tunable band-edge emission (quantum yield of up to 18%) in the blue spectral range. Among all III–V quantum dots, these quantum dots show the brightest core emission in the blue spectral region.
13 citations
TL;DR: The current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSB NWs and their characterization is summarized, especially in relation to Sb incorporation during growth.
Abstract: Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
10 citations
TL;DR: It is hypothesize that a solid antimony-rich manganese antimonide cluster acts as an initiator to tail growth in solution, and these anisotropic particles can be transformed progressively into spherical-shaped nanoparticles upon the addition of excessManganese carbonyl.
Abstract: A new approach to the solution-phase synthesis of manganese antimonide nanoparticles was developed to reduce competitive oxide formation by exploitation of sodium borohydride (NaBH4) (0.53-2.64 mmol) as a sacrificial reductant. However, in the presence of near-stoichiometric precursor amounts of manganese carbonyl and triphenyl antimony, the introduction of NaBH4 results in a different growth mechanism, Solution-Solid-Solid (SSS), leading to tadpole-shaped manganese antimonide nanoparticles with antimony-rich heads and stoichiometric manganese antimonide tails. We hypothesize that a solid antimony-rich manganese antimonide cluster acts as an initiator to tail growth in solution. Notably, the length of the tail correlated with the amount of NaBH4 used. Interestingly, these anisotropic particles can be transformed progressively into spherical-shaped nanoparticles upon the addition of excess manganese carbonyl. The anisotropic manganese antimonide particles possess saturation magnetizations ca. twenty times higher than that reported for MnSb nanoparticles prepared without NaBH4, attributed to limitation of oxidation.
9 citations
07 May 2019
TL;DR: In this paper, a 3D, subwavelength InAsSb absorber is embedded in a cylindrical dielectric resonator antenna made of amorphous silicon.
Abstract: Antenna coupled detectors break the intrinsic tradeoff between signal and noise by “collecting over a large area” and “detecting over a small area”. Most antenna coupled detectors in the infrared rely on a metal resonator structure. However, there are losses associated with metallic structures. We have demonstrated a novel long-wave infrared (LWIR) detector that combines a dielectric resonator antenna with an antimonide-based absorber. The detector consists of a 3D, subwavelength InAsSb absorber embedded in a resonant, cylindrical dielectric resonator antenna made of amorphous silicon. This architecture enables the antimonide detection element to shrink to deep subwavelength dimensions, thereby reducing its thermal noise. It is important to note that this concept only applies when (a) the detector noise is limited by bulk noise mechanisms with negligible surface leakage currents and (b) the dominant source of current in the device is due to dark current (such as diffusion) that scales with the volume of the detector. The dielectric resonator enhances the collection of photons with its resonant structure that couples incident radiation to the detector. We will present results on the absorption in structures with and without the dielectric resonator antenna. The signal to noise enhancement in the LWIR photodiodes integrated with the dielectric resonator antenna using radiometric characterization will be discussed.
7 citations
08 Feb 2019
TL;DR: In this paper, the development in the growth by molecular beam epitaxy (MBE) of III-Sb compound semiconductors and heterostructures for optoelectronic device applications is reviewed.
Abstract: We review the developments in the growth by molecular‐beam epitaxy (MBE) of III–Sb compound semiconductors and heterostructures for optoelectronic device applications. After discussing the peculiarities of antimonides and their potential for optoelectronic applications, we give a brief historical survey of their epitaxial growth. Then we review the progress in the MBE growth of III–Sb materials from MBE system evolutions to alloy, doping, and interface control, and metamorphic growth on Si substrates, insisting particularly on recent achievements. The objective of this chapter is to provide useful information and references to readers who are not familiar with the MBE of antimonide compounds and heterostructures.
6 citations
TL;DR: A soft chemical method to synthesize intermetallic antimonides from ternary chalcogenide precursors under argon atmosphere below 200 °C is introduced and Powder X-ray diffraction and compositional analysis clearly indicate that a new phase of Ag3Sb nanocrystal was synthesized from the Ag3 SbS3 precursor.
Abstract: The synthesis of intermetallic antimonides usually depends on either the high-temperature alloying technique from high-purity metals or the flux method in highly poisonous Pb-melt. In this paper, w...
TL;DR: In this article, the authors reported quantum efficiency enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers.
Abstract: We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.
TL;DR: In this article, the authors reported quantum efficiency enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers.
Abstract: We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.
TL;DR: In this article, the authors investigated room-temperature, nonpolarized Raman scattering of nominally undoped dilute-antimonide GaSbN nanostructures, grown by plasma-assisted molecular beam epitaxy on n-type Si substrates.
Abstract: Dilute-antimonide III-nitrides (Sb < 1%), with their unprecedented and broad range tuning of bandgap and associated properties, provide extraordinary opportunities for engineering band structure, strain, and polarization and a significant promise to overcome the fundamental issues of conventional InGaN for efficient light emitters operating in the deep-visible spectral range, including the large lattice mismatch (∼11%) between InN and GaN, large strain-induced polarization field, and difficulty in realizing efficient p-type conduction. However, a fundamental understanding of their synthesis, structural, and optical properties at the dilute Sb regime has so far remained largely unexplored. Herein, we have investigated room-temperature, nonpolarized Raman scattering of nominally undoped dilute-antimonide GaSbN nanostructures, grown by plasma-assisted molecular beam epitaxy on n-type Si substrates. Both nonresonant and near-resonant excitation in backscattering geometry reveals that the typical Raman modes of GaN are largely affected due to a small amount of Sb incorporation (<1%). A nonlinear and progressive downward frequency shift of the A1(LO) mode in GaSbN epilayers had been derived from 736 cm−1 to 715 cm−1 for Sb composition up to 0.6%, which is analogous to the large bandgap reduction of dilute-antimonide GaSbN. Raman signatures corresponding to Sb incorporation can be observed further via two additional peaks in the spectra. Complementary analysis on structural and surface charge properties of dilute-antimonide GaSbN suggests that the Raman-mode fluctuations can be useful for probing Sb contents in the alloy with further strain correction.
DOI•
24 Jun 2019
TL;DR: In this paper, the authors describe photocathodes production and discuss the cathode's performance from cathode growth system to the DC gun, and describe the photocathode transfer system.
Abstract: Low Energy RHIC electron cooling (LEReC) is a bunched electron cooler at RHIC. The Bi-alkali photocathodes are chosen as electron source due to its long lifetime and high QE at visible wavelength. Because the DC gun needs to produce 24/7 beams over several months, cathode production system and multiple cathodes transferring systems are designed, commissioned and in operation. In this report, we will describe our photocathodes production and discuss the cathode’s performance from cathode growth system to the DC gun.
TL;DR: In this paper, the optimization of gallium antimonide (GaSb) junctionless field effect transistor (JLFETs) and logic inverter characteristics are analyzed.
Abstract: In this paper, the optimization of gallium antimonide (GaSb) junctionless field-effect transistor (JLFETs) and logic inverter characteristics are analyzed. The hole mobility of GaSb is much higher than that of Si, which warrants high-performance p-channel transistor and low-power operation capability, and also, the mismatch between electron and hole mobilities is much lessened. Consequently, the dimension of p-channel MOSFET based on GaSb can be significantly reduced compared with the Si case. For these reasons and the potential application of GaSb to wide variety of III–V compound semiconductors towards electronics and photonics integration, and components under the extreme conditions, GaSb JLFET is studied in depth in this work. The proposed GaSb JLFET has the Al2O3 buffer between the channel and the Si substrate, which releases the lattice mismatch and suppresses leakage current effectively. The proposed n-channel JLFET has an Ion of 472 µA/µm and, SS of 76.2 mV/dec. The p-channel JLFET has an Ion of 541 µA/µm and SS of 73.4 mV/dec. The inverter using GaSb JLFETs shows excellent performances including NML = 0.28 V, NMH = 0.29 V, τPHL of 1.8 ps, and τPLH of 6.8 ps at an operating voltage as low as VDD = 0.7 V.
TL;DR: In this article, phase-pure samples of antimonides were obtained by arc-melting pieces of the elements and subsequent annealing, and the samples were investigated by powder and single crystal X-ray diffraction.
Abstract: Phase-pure samples of the antimonides PrPdSb and NdPdSb were prepared by arc-melting pieces of the elements and subsequent annealing. The samples were investigated by powder and single crystal X-ray diffraction: NdPtSb type, space group P6₃mc, a = 458.70(5), c = 780.55(6) pm, wR2 = 0.0272, 244 F² values, 11 variable parameters for PrPdSb and a = 458.18(4), c = 771.25(6) pm, wR2 = 0.0317, 229 F² values, 11 variable parameters for NdPdSb. The palladium and antimony atoms form slightly puckered Pd₃Sb₃ hexagons which are rotated by 60° in every other layer. The rare earth (RE) atoms are coordinated by two Pd₃Sb₃ hexagons with the RE–Pd shorter than the RE–Sb contacts. The ¹²¹Sb Mossbauer spectra at T = 5 K confirm the antimonide character with isomer shifts of −7.55 (PrPdSb) and −7.47 mm · s⁻¹ (NdPdSb). In agreement with the crystal structures, each spectrum could be fitted with one quadrupole split signal.
Patent•
19 Mar 2019
TL;DR: In this article, an antimonide laser light source, a chopper, an optosonic pond, a rheomicrophone and a signal processing unit are used for detecting methyl bromide gas concentration.
Abstract: The invention provides a system and a method for detecting methyl bromide gas concentration by optosonic spectrometry. The system comprises an antimonide laser light source, a chopper, an optosonic pond, a rheomicrophone and a signal processing unit. The antimonide laser light source is connected to the chopper and is arranged on one side of the optosonic pond; the rheomicrophone is arranged at the bottom of the optosonic pond, the laser light source emits light to the chopper, the chopper chops the light to form modulated light; the antimonide laser light source emits light to form a narrow-bond modulated spectrum to reach the optosonic pond. The system has the advantages of high sensitivity, high stability, good shield interference and small size. According to the principle of measuringmethyl bromide by optosonic spectrometry, no chemical substances are added, and the method is stable in optical structure after calibration primarily after delivery without secondary or multi-time calibration, so that the defects of a conductivity method are also avoided.
Patent•
10 Jan 2019TL;DR: In this paper, the concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV).
Abstract: A nanostructure optoelectronic device, in accordance with aspects of the present technology, can include a group-III element semiconductor with a first type of doping, one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first type of doped group-III element semiconductor, and a group-III element semiconductor with a second type of doping disposed on the dilute-Antimonide group-III-Nitride. The concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV)
Patent•
03 Sep 2019TL;DR: In this article, a type-II hybrid absorber photodetector (PD) is provided with ultrafast speed and high-power performance at terahertz (THz) regime.
Abstract: A type-II hybrid absorber photodetector (PD) is provided with ultrafast speed and high-power performance at terahertz (THz) regime. Through narrowed bandgap and enhanced absorption process at a type-II interface between absorption layers of gallium arsenic antimonide (GaAs0.5Sb0.5) and indium gallium arsenide (In0.53Ga0.47As), the incorporation of the type-II P+-GaAs0.5Sb0.5/i-In0.53Ga0.47As hybrid absorber in an indium phosphide (InP) UTC-PD obtains improvement in responsivity. Current blocking effect is minimized owing to the high-excess energy of photo-generated electrons injected from the GaAs0.5Sb0.5 layer to an InP-based collector layer. The flip-chip bonding packaged device shows a moderate responsivity along with a record wide optical-to-electrical bandwidth at 0.33 THz, among all the reported for long-wavelength ultrafast PDs. A saturation current exceeding 13 mA and a continuous-wave output power of −3 decibel-milliwatts are demonstrated at an operating frequency of 0.32 THz under an optical signal with a sinusoidal wave and a ˜63% modulation depth for PD excitation.
01 Mar 2019
TL;DR: In this article, the formation of antimonide nanowire segments in the metastable wurtzite phase is studied and the hexagonal crystal phase is stabilized due to the elastic strain.
Abstract: Controlled formation of metastable phases is one of the challenges of the physics of crystal growth. Gold-catalyzed nanowires are considered to be one of the most convenient systems to study this phenomenon. Studies of antimonide-based nanowires indicate that they preferentially crystallize in the zinc blende crystal structure rather than wurtzite, which is common in other III-V nanowire materials. Here we propose a new approach to the formation of antimonide nanowire segments in the metastable wurtzite phase and support it with theoretical results. The hexagonal crystal phase is stabilized due to the elastic strain. We suggest that this approach can be applied to other III-V nanowires as well.
TL;DR: In this paper, the growth and characterization of two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb), were examined.
Abstract: The purpose of this paper is to examine the growth and characterization of the two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb). In this paper, fabrication and characterization of n-ZnO/p-GaSb heterojunction diode is analyzed.,Thermo vertical direction solidification (TVDS) method was used to synthesize undoped GaSb ingot from high purity Ga (5N) and Sb (4N) host materials. Thermal evaporation technique is used to prepare a film of GaSb on glass substrate from the pre-synthesized bulk material by TVDS method. Undoped ZnO film was grown on GaSb film by sol–gel method by using chemical wet and dry (CWD) technique to fabricate n-ZnO/p-GaSb heterojunction diode.,The formation of crystalline structure and surface morphological analysis of both the GaSb bulk and film have been carried out by x-ray diffraction (XRD) analysis and scanning electron microscopy analysis. From the XRD studies, the structural characterization and phase identification of ZnO/GaSb interface. The current–voltage characteristic of the n-ZnO/p-GaSb heterostructure is found to be rectifying in nature.,GaSb film growth on any substrate by thermal evaporation method taking a small piece of the sample from the pre-synthesized GaSb bulk ingot has not been reported yet. Semiconductor device with heterojunction diode by using two different semiconductors such as ZnO/GaSb was used by this group for the first time.
Patent•
29 Nov 2019
TL;DR: In this article, an antimonide superlattice avalanche photodiode and a preparation method for its preparation was described. But the preparation method was not discussed. And the authors did not reveal the structure of the P-type InAsP/InAsSb super-lattices.
Abstract: The invention discloses an antimonide superlattice avalanche photodiode and a preparation method thereof. The photodiode comprises: a P-type substrate; a P-type InAs/GaSb superlattice absorption layerarranged on the P-type substrate; a P type InAsP/InAsSb superlattice charge layer arranged on the P-type InAs/GaSb superlattice absorption layer; a P-type InAsP/InAsSb superlattice multiplication layer arranged on the P-type InAsP/InAsSb superlattice charge layer; an N-type InAsP/InAsSb superlattice contact layer arranged on the P-type InAsP/InAsSb superlattice multiplication layer; a first electrode arranged on the P-type substrate; and a second electrode arranged on the N-type InAsP/InAsSb superlattice contact layer. According to the invention, a brand-new P-type InAsP/InAsSb superlattice is used as a charge layer and a multiplication layer, the electron transport is not influenced while the heterostructure is introduced, the hole and electron ionization rate of the InAsP/InAsSb superlattice is larger than that of a bulk material AlGaAsSb, the APD noise is smaller, and the multiplication layer is made of a material without Al and Ga, so that the device performance is more excellent.
Patent•
25 Oct 2019
TL;DR: In this article, a method for removing a gallium antimonide substrate from a secondary superlattice extension thin film layer is described. But the main material with low corrosion capability is selected, the buffer agent and the additive are matched and used for removal.
Abstract: The invention discloses corrosive liquid and a method for removing a gallium antimonide substrate from a secondary superlattice extension thin film layer. The corrosive liquid is used for removing thegallium antimonide substrate on the secondary superlattice extension thin film layer, the corrosive liquid is prepared from a raw material, a buffer agent and an additive, wherein the raw material isprepared from at least one of the following components of hydrofluoric acid and phosphoric acid, the buffer agent is prepared from at least one of the following components of citric acid, lactic acidand tartaric acid, and the additive is prepared from at least one of the following components of a compound containing a permanganate ion, a compound containing a dichromic acid ion or a mixture containing the permanganate ion and the dichromic acid ion. According to the corrosive liquid and the method, the main material with the low corrosion capability for gallium antimonide is selected, the buffer agent and the additive are matched and used for removing the gallium antimonide substrate on the secondary superlattice extension thin film layer, the situation that the secondary superlattice extension thin film layer is removed by corrosion in the gallium antimonide removing process in the prior art can be avoided, no damage on the surface of the secondary superlattice extension thin film layer is achieved, and the surface state of the secondary superlattice extension thin film layer is successfully restored.
Patent•
14 May 2019
TL;DR: In this paper, an antimony current automatic regulating and controlling method for manufacturing a high-performance alkali metal antimonide photoelectric cathode is presented, which is suitable for an alkali and antimony simultaneous evaporation stage.
Abstract: The invention provides an antimony current automatic regulating and controlling method for manufacturing a high-performance alkali metal antimonide photoelectric cathode; the method comprises the following steps of carrying out alkali metal evaporation, antimony evaporation, optical current curve fitting and prediction, optical current curve slope judgment and antimony evaporation current adjustment. The method is suitable for an alkali metal and antimony simultaneous evaporation stage, and firstly, an optical current curve is fitted, and then whether the slope of the optical current curve reaches an expected value or not in the future fixed time range is predicted, and next, whether the actual slope of the optical current curve reaches an expected value or not is judged; if any of the tworeaches the expected value, whether the actual slope of the optical current curve reaches a specified value or not is judged; and finally, antimony evaporation current adjustment is carried out according to the judgment condition, and the process is repeated until the slope of the optical current curve reaches the specified angle and the process is ended. The method can be used for solving the problem that the proportion of alkali metal and antimony is disordered due to the fact that the antimony yield is not controllable in the production process of the alkali metal antimonide photoelectriccathode, and the photoelectric emission performance of the alkali metal antimonide photoelectric cathode is improved.
Patent•
17 Jan 2019
TL;DR: A photon detector such as an avalanche photodiode or a single photon avalanche photodromide comprises a semiconductor device comprising an absorber region and a multiplication region as discussed by the authors, where the absorption region comprises indium gallium arsenide antimonide (InGaAsSb), and the multiplication region comprises aluminium arsenide anti-antimide (AIGaSb).
Abstract: A photon detector such as an avalanche photodiode or a single photon avalanche photodiode comprises a semiconductor device comprising an absorber region and a multiplication region. The multiplication region comprises aluminium arsenide antimonide (AIAsSb) and/or aluminium gallium arsenide antimonide (AIGaAsSb). The absorption region comprises indium gallium arsenide antimonide (InGaAsSb) and/or indium arsenide antimonide (InAsSb).
26 Apr 2019
TL;DR: In this article, cylinder photon traps, prism photon traps and SiO2/Ta2O5 antireflection films were added to the active areas of short-wavelength infrared detectors.
Abstract: We report cylinder photon traps, prism photon traps, and SiO2/Ta2O5 antireflection films added to the active areas of short wavelength infrared detectors. The total device thickness was estimated ~3.3μm and with the p-i-n structure based on antimonide. The simulation results show that the photon traps increase the absorption of the invisible spectrum distinctly. Also, the optical measurements reveal that maximal responsivity of the detector with PTs array is 0.094A/W in the visible range and 0.64A/W in the short wavelength infrared spectrum. The responsivity in the wavelength of short-wave infrared can be increased apparently as well. Thus, the photon traps array may a potential method for antimonide-based visible to short wavelength infrared bispectral photodetector.
TL;DR: In this article, the InSb/HfO2 stacks have been systematically studied upon atomic layer deposition (ALD) and rapid thermal annealing (RTA) at 325 and 400°C.
TL;DR: It is demonstrated that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress the phonon relaxation time but hardly affects that of electrons.
Abstract: The electronic and phonon transport properties of graphene-like boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) monolayers are investigated using first-principles calculations and Boltzmann theory. By considering both the phonon-phonon and electron-phonon scatterings, we demonstrate that the strong bond anharmonicity in the BAs and BSb monolayers can dramatically suppress the phonon relaxation time but hardly affects that of electrons. As a consequence, both systems exhibit comparable power factors with that of the BP monolayer but much lower lattice thermal conductivities. Accordingly, a maximum ZT values above 3.0 can be achieved in both BAs and BSb monolayers at optimized carrier concentrations. Interestingly, very similar p- and n-type thermoelectric performance is observed in the BSb monolayer along the armchair direction, which is of vital importance in the fabrication of thermoelectric modules with comparable efficiencies.