Showing papers on "Equivalent series resistance published in 1992"
121 citations
IBM1
TL;DR: In this paper, a dual poly gate is fabricated using a process where the poly and source/drain (S/D) are doped simultaneously, and a reduced operating voltage of 2.5 V is used which allows the application of shallow junctions with abrupt profiles (no LDD) to minimize the device series resistance as well as gate to source/Drain overlap capacitance.
Abstract: For Pt. I, see ibid., vol.39, no.4, pp.959-966 (1992). The key technology elements and their integration into a high-performance, selectively scaled, 0.25- mu m CMOS technology are presented. Dual poly gates are fabricated using a process where the poly and source/drain (S/D) are doped simultaneously. The critical issues related to the dual poly gate are addressed. A reduced operating voltage of 2.5 V is used which allows the application of shallow junctions with abrupt profiles (no LDD) to minimize the device series resistance as well as gate to source/drain overlap capacitance. The poly gate and the S/D sheet resistances are lowered, using a thin salicide (TiSi/sub 2/) process. The TiSi/sub 2/ thickness is reduced to maintain low leakage and low contact resistance for the shallow S/D junctions. The gate level with 0.4- mu m physical length is defined using optical lithography with a contrast enhanced layer (CEL) resist system. >
97 citations
TL;DR: In this paper, the dielectric response of thin perovskite ferroelectrics fabricated on electrodes such as indium tin oxide is calculated as a function of frequency, film & barrier layer thickness, and dielectrics constant using an equivalent circuit model based on properties of the bulk, the electrode and a series resistance.
Abstract: The dielectric response of thin films of perovskite ferroelectrics fabricated on electrodes such as indium tin oxide is calculated as a function of frequency, film & barrier layer thickness, and dielectric constant using an equivalent circuit model based on properties of the bulk, the electrode and a series resistance. Using reasonable estimates of parameters it is shown that measurements of the dielectric constant and loss by conventional dielectric bridges can lead to results which vary in a complex fashion and which may bear little relation to the true dielectric properties of the film. In particular, observation of a Curie temperature in thin films can often be masked by circuit or electrode effects. Results are given in terms of direct frequency plots and as impedance spectra.
90 citations
TL;DR: In this paper, the performance of parallel combination of large-value and small-value capacitors to increase the frequency coverage of either one and overcome the effect of lead inductance is examined.
Abstract: The effectiveness of using the parallel combination of large-value and small-value capacitors to increase the frequency coverage of either one and overcome the effect of lead inductance is examined. Computed and experimental results are given that show this scheme is not significantly effective. The improvement at high frequencies is at most 6 dB over the use of only the large-value capacitance. >
74 citations
TL;DR: In this paper, a nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode, which involves the use of an auxiliary function and a computer fitting routine.
Abstract: A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer‐fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I‐V measurements using both commercially available and laboratory‐prepared Schottky diodes.
59 citations
TL;DR: In this article, a simple and continuous analytical approximation for the equation of an ideal diode with a series resistance and shunt conductance is proposed, which produces relative errors smaller than 3%.
Abstract: A simple and continuous analytical approximation for the equation of an ideal diode with a series resistance and shunt conductance is proposed. When compared to the exact numerical solution, the approximate expression produces relative errors smaller than 3%, for any values of series resistance and shunt conductance.
50 citations
TL;DR: The wealth of experimental observations which exists in the literature on AC impedance nonlinearity is physically interpreted and the current limit of linearity, iL, increases with frequency such that iL is proportional to ωβ.
Abstract: In this the second of a series of papers on the nonlinearity of the electrode-electrolyte interface impedance, the wealth of experimental observations which exists in the literature on AC impedance nonlinearity is physically interpreted. The interface impedance is well represented by the parallel combination of a constant phase angle impedance and a charge transfer resistance. The charge transfer resistance is the major source of the observed nonlinearities. As a result, the current limit of linearity, i
L
, increases with frequency such that i
L
is proportional to ωβ. The series resistance, R
s
, of the interface impedance initially increases with applied signal amplitude, reaches a maximum and then decreases. The series reactance, X
s
, decreases monotonically with signal amplitude.
43 citations
TL;DR: In this paper, the series resistance R s of the channel has been found from a set of MOSTs on the same chip, all having the same channel width, but differing in length.
Abstract: Low-doped CMOS transistors have been investigated. On the basis of the corrected optical channel length, the series resistance R s of the channel has been found from a set of MOSTs on the same chip, all having the same channel width, but differing in length. R s is about inversely proportional to the effective gate voltage V G ∗ . The 1/ƒ resistance noise of the series resistance S R s is proportional to V G ∗−3 or V G ∗−4 , depending on the implantation energy used to profile the low-doped parts of source/drain. Increasing the implantation energy from 100 to 180 keV results in a decrease in series resistance and a change in trend of its 1/ƒ noise dependence on V G ∗ . In our experiments, R s is about 15% of the total resistance and S R s 20% of the total noise power in a short-channel MOST at V G ∗ = 1 V .
37 citations
TL;DR: Experimental measurements using several aluminium sheets and a titanium alloy can in the presence of the TETs coils used for the Penn State artificial heart showed excellent agreement with the theory for inductance parameters and agreed within a factor of 2 for ESR measurements when skin effect was considered.
Abstract: The effects of metal objects on the mutual inductance, self-inductance, and effective series resistance (ESR) of the coaxial coils of a transcutaneous energy transmission system (TETS) were investigated theoretically and experimentally. The theory considers a thin conducting sheet of infinite size aligned parallel to a current-carrying coil. Results of the theory indicate that coil parameters vary with the distance from the sheet to the coil. Changes in mutual and self inductance are independent of the conductivity and thickness of the sheet, with a larger percentage change for mutual inductance than for self inductance. Changes in ESR are proportional to the surface resistivity of the sheet. Experimental measurements using several aluminium sheets and a titanium alloy can in the presence of the TETs coils used for the Penn State artificial heart showed excellent agreement with the theory for inductance parameters and agreed within a factor of 2 for ESR measurements when skin effect was considered. >
33 citations
TL;DR: In this paper, a titanium salicide process was used using a 0.25 mu m oxide spacer, and the sheet resistance of the silicided SOI layer is approximately 5 Omega / Square Operator.
Abstract: MOS transistors with effective channel lengths down to 0.2 mu m have been fabricated in fully depleted, ultrathin (400 AA) silicon-on-insulator (SOI) films. These devices do not exhibit punchthrough, even for the smallest channel lengths, and have performance characteristics comparable to deep-submicrometer bulk transistors. The NMOS devices have a p/sup +/-polysilicon gate, and the PMOS devices have an n/sup +/-polysilicon gate, giving threshold voltages close to 1 V with very light channel doping. Because the series resistance associated with the source and drain regions can be very high in such thin SOI films, a titanium salicide process was used using a 0.25 mu m oxide spacer. With this process, the sheet resistance of the silicided SOI layer is approximately 5 Omega / Square Operator . However, the devices still exhibit significant series resistance, which is likely due to contact resistance between the silicide and silicon source/drain regions. >
28 citations
TL;DR: In this paper, a Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE), and the anodes were formed using a Pt/Au electroplate technique.
Abstract: A quarter‐micrometer diameter Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE). The anodes were formed using a Pt/Au electroplate technique. The diode zero‐bias capacitance of 0.25 fF and series resistance of about 25 Ω, measured at dc, correspond to a ‘‘figure‐of‐merit’’ cuttoff frequency of about 25 THz. The video responsivity at 118 μm (2540 GHz) was as high as 200 V/W, over three times higher than the best previously reported. The design, fabrication, and evaluation of this diode is described.
TL;DR: In this article, a method for the extraction of the thermal resistance from the input characteristics of a bipolar transistor is presented, where the authors discuss the impact on the determination of the Early voltage and the emitter series resistance.
Abstract: Due to the finite thermal resistance between the surface and backside of semiconductor wafers, self-heating effects may influence the results of parameter measurements in temperature-controlled waferprobe stations. This paper discusses the impact on the determination of the Early voltage and the emitter series resistance. Furthermore, a novel method for the extraction of the thermal resistance from the input characteristics of a bipolar transistor is presented.
TL;DR: In this paper, the electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm, and the results show that large area contact characteristics can be maintained to the smallest sizes.
Abstract: The electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm. Trench-isolated series resistance test structures were fabricated using TiSi/sub 2/ self-aligned contact technology. Resistance measurements have been performed as a function of contact size in the temperature range from 100 to 300 K and analyzed using multidimensional resistor ladder network models. Well-behaved small-volume ohmic contacts have been achieved. Large-area contact characteristics can be maintained to the smallest sizes. Multidimensional current flow has little effect on the measured resistances. Small lateral dimensional variations are responsible for the higher than predicted series resistance for the smallest sizes. The implications on nanoelectronic devices and circuits are quantified. >
TL;DR: In this paper, the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator-semiconductor interfaces in metal-insulator-semmiconductor (MIS) capacitors in accumulation are investigated.
Abstract: We have investigated the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator‐semiconductor interfaces in metal‐insulator‐semiconductor (MIS) capacitors in accumulation. A new circuit model taking into account the capture of tunneling electrons by interface traps is derived. Theoretical and experimental results of Si3N4/Si/GaAs, Si3N4/epi‐Si, and SiO2/epi‐Si MIS capacitors are compared. The Si, Si3N4, and SiO2 layers investigated were deposited in situ by electron cyclotron resonance generated plasma in an ultrahigh vacuum chemical vapor deposition chamber. Frequency dispersion of both Cm and Rm can be adequately explained by the new circuit model.
01 Jun 1992
TL;DR: In this article, experimental models of several grounded coplanar waveguide discontinuity structures, such as series and shunt inductors and capacitors, have been developed using experimental measurements and computer optimization.
Abstract: Experimental models of several grounded coplanar waveguide discontinuity structures, such as series and shunt inductors and capacitors, have been developed using experimental measurements and computer optimization. The equivalent circuit models have been derived in terms of structural parameters of the discontinuity structures to facilitate their easy use in the design of coplanar MMICs (monolithic microwave integrated circuits). These simple models can be integrated with any simulation program to facilitate their easy use. >
Patent•
28 Apr 1992
TL;DR: In this article, the authors propose to variably set the equivalent resistance values of a PMOS and NMOS resistance sections by allowing the PMOS or NMOS resistances to respectively combine arbitrary resistance elements from a plurality of resis tance elements.
Abstract: PURPOSE:To variably set the equivalent resistance values of a PMOS and NMOS resistance sections by allowing the PMOS and NMOS resistance sections to respectively combine arbitrary resistance elements from a plurality of resis tance elements. CONSTITUTION:A PMOS resistance section 3 can arbitrarily set its equivalent resistance value to an arbitrary value by combining arbitrary resistance elements from a plurality of resistance elements gammaP1-gammaPX and an NMOS resistance section 6 can also sets its equivalent resistance value to an arbitrary value by combining arbitrary resistance elements from a plurality of resistance elements gammaN1-gammaNY. Thus this semiconductor integrated circuit device 7 can set the equivalent resistance values of the PMOS and NMOS resistance sections 3 and 6 at the manufacturing time so that the variation of the threshold voltage can be minimized in accordance with the number of inputs.
TL;DR: In this article, a means for characterizing the effective series resistance (ESR) of low loss capacitors at radio frequencies with only a few measurements is suggested, and it is necessary that the dielectric have a known loss/frequency relationship.
Abstract: A means for characterizing the effective series resistance (ESR) of low loss capacitors at radio frequencies with only a few measurements is suggested. It is necessary that the dielectric have a known loss/frequency relationship. At low frequencies, D should be constant, or change at a constant rate, as many dielectrics do. At high frequencies, the capacitor loss should be attributable to skin effect in the conductors and must not exhibit parallel or dimensional resonances in the frequency range of interest, usually a phenomenon of high permittivity dielectrics. >
TL;DR: In this article, the authors derived analytical expressions for calculating electrical spreading resistance in vertical-cavity surface-emitting diode laser contacts with three contact configurations: annular, circular, and broad area.
Abstract: Analytical expressions are derived for calculating electrical spreading resistance in vertical‐cavity surface‐emitting diode lasers. Three contact configurations are considered: annular, circular, and broad area. Calculations performed for proton‐implanted surface‐emitting lasers demonstrate that low values of series resistance can be achieved using the broad‐area contact configuration.
TL;DR: In this article, the Schottky barrier is combined with stacked single quantum barriers to suppress the shunt capacitance introduced by the discontinuity of the metal strip at the diode site.
Abstract: Varactors have been extensively employed for harmonic generation, where high cut-off frequency is dependent upon small C
min
, which is typically achieved using small device active area. However, small area limits the output power. Furthermore, the power and frequency dependences of the series resistance in the epitaxial region degrade the efficiency and cut-off frequency as well. As a result, currently utilized varactors are only officient for relatively low power generation and limited output frequency. Herein, we describe our new approach where by epitaxially stacking single quantum barrier structures, more than an order of magnitude improvement in cut-off frequency and power handling ability may be possible. Alternatively, by combining a Schottky barrier with stacked single quantum barriers, superior performance can also be achieved. These concepts can be readily employed for quasi-optical frequency multiplier arrays, and appear to result in simplified fabrication compared to other devices. The design of high performance quasi optical arrays requires optimization of the passive (metalization) grid as well as the embedded semiconductor devices. Recent work has resulted in an improved impedance model for the standard diode-loaded strip array, including a quantitative estimate of the shunt capacitance introduced across the diode by the discontinuity of the metal strip at the diode site (“gap”). The value of this capacitance exceeds the predictedC
min for these new devices. We discuss two grid design approaches that can suppress this capacitance.
TL;DR: The effects of undesired series resistance in thin oxide capacitors are studied in this paper, where the breakdown electric field can be highly overestimated due to the series resistance associated with the test structure: the larger the resistance, the bigger the error.
Abstract: The effects of undesired series resistance in thin oxide capacitors are studied. Thin dielectric reliability is usually evaluated by means of accelerated tests (ramped or constant voltage or current stress). It is shown that the breakdown electric field can be highly overestimated due to the series resistance associated with the test structure: the larger the resistance, the bigger the error. Moreover, breakdown detection criteria in automatic test routines become more critical. It is also demonstrated that a nonuniform stress is applied to the dielectric whenever the series resistance is position-dependent, as it usually is. Erroneous breakdown-related defect distributions could be inferred as a consequence of neglecting the series resistance effect. It is therefore suggested that workers pay much attention to the test structure layout definition in order to minimize these problems. >
19 May 1992
TL;DR: In this paper, an extremely low on-resistance Lateral DSA MOSFET (LDM0S) was developed for intelligent driver LSIs, which has an improved meshed gate structure with double-layer A1 electrodes.
Abstract: An extremely low on-resistance Lateral DSA MOSFET(LDM0S) is developed for intelligent driver LSIs. This device has an improved meshed gate structure with double-layer A1 electrodes. Drain offset layer doping is introduced to decrease drain series resistance, and an A1 field plate is formed by the first A1 layer to reduce electric field at the substrate surface. A 30-V breakdown voltage and a 75-m!2=mm2 onresistance are obtained in the device fabricated by a 1.5pm BiCMOS process. The on-resistance is reduced 20% compared with conventional devices. An H-bridge driver is designed using those devices, and a very lowpower dissipation is achieved.
21 Apr 1992
TL;DR: In this paper, the authors report vertical integration of AlAs/InGaAs/ InAs/INAs/A/InGAAs/AlAs resonant tunneling diode (RTD) structures on InP; as many as 15 have been grown in series combination.
Abstract: The authors report vertical integration of AlAs/InGaAs/InAs/InGaAs/AlAs resonant tunneling diode (RTD) structures on InP; as many as 15 have been grown in series combination. They show that hysteresis in the current-voltage characteristics caused by series resistance can be reduced by doping the resonant tunneling double barrier structures, and further reduction in hysteresis is possible through structural modifications. The doped RTDs have reduced resonance voltage with approximately equal peak spacings and good peak-to-valley ratios. Using an FET as a constant current load with an 8-peak vertically integrated RTD device, a nine-state multivalued memory is demonstrated. >
TL;DR: In this paper, the authors investigated the resistance and impedance as functions of frequency for Dupont 1600-series thick-film resistors and reported that there exists an abrupt decrease in the resistance around 1 MHz.
Abstract: The resistance and impedance as functions of frequency for Dupont 1600-series thick-film resistors are investigated. It is reported that there exists an abrupt decrease in the resistance around 1 MHz. An equivalent circuit model is proposed to explain the high-frequency behavior in the resistor. After multiple times of firing, the resistance is altered and the relative change is related to the intrinsic resistance in the resistor. It is argued that the resistance variation is associated with the microstructure evolution of the resistor, in which the rearrangement of conducting grains in the glass matrix plays a major role. >
TL;DR: In this paper, the series-resistance independent intrinsic intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter, and it is shown that if this resistance is not extracted separately, not only the mobility reduction factor depends on the series resistance but also the maximum drift velocity, the saturation field factor, and the static feedback factor.
Abstract: It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance. >
TL;DR: In this paper, the results of thermal and magnetic field studies are reported for commercially available ceramic chip capacitors commonly used in hybrid microwave circuits, with room temperature values of 51 and 45 pF.
TL;DR: In this article, a new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed to avoid a selective epitaxy step.
Abstract: A new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pF and a series resistance around 3 Omega ; (RC product >
28 Sep 1992
TL;DR: In this paper, the authors summarized information for determining the proper circumstances for applying capacitors to improve the operating efficiency of an industrial electrical distribution system, including the function of capacitors in an electrical power system, calculations to select the appropriate value of capacitance, selection of the optimal location in the distribution system to connect the capacitors, automatic switching of capacitor to match changes in the power system load, including system variations when capacitor switching is used.
Abstract: The author summarizes information for determining the proper circumstances for applying capacitors to improve the operating efficiency of an industrial electrical distribution system. The following topics are discussed; the function of capacitors in an electrical power system; calculations to select the appropriate value of capacitance; selection of the optimal location in the distribution system to connect the capacitors; automatic switching of capacitors to match changes in the power system load, including system variations when capacitor switching is used; economic factors involved to justify the addition of capacitors to an industrial power distribution system; system harmonics and resonance effects in capacitor installations; and requirements of the National Electrical Code (NEC) concerning the characteristics and installation of capacitors. >
TL;DR: In this article, the authors demonstrate the usefulness of a low-frequency capacitance deep level transient spectroscopy (LFDLTS) technique suitable for samples with a large built-in resistance in series with the depletion capacitance.
Abstract: In this article, we demonstrate the usefulness of a low‐frequency capacitance deep level transient spectroscopy (LFDLTS) technique suitable for samples with a large built‐in resistance in series with the depletion capacitance. As a case study, we investigate the effects of series resistance arising from the contact resistance and the bulk resistance of aluminum gallium arsenide epitaxial layers grown on semi‐insulating gallium arsenide substrates. We show that there can be significant errors in the density and the activation energy of the traps (the so‐called DX centers) determined by the conventional high‐frequency (1 MHz) capacitance deep level transient spectroscopy measurements when the series resistance associated with the sample is high. On the other hand, the LFDLTS measurements are found to be free from these artifacts related to the series resistance effects.
22 Jun 1992
TL;DR: In this paper, double-layer capacitors specified by DESC drawing 92001 and manufactured by the Evans Company were evaluated for a cycle-life test of 400,000 charge discharge cycles.
Abstract: Performance characteristics are presented for double-layer capacitors specified by DESC drawing 92001 and manufactured by the Evans Company. Evaluated capacitors passed all specified environmental and physical tests. A cycle-life test of 400000 charge discharge cycles was completed. The largest capacitance change was 29%. It occurred at the maximum rated temperature. Insignificant changes were observed in the equivalent series resistance (ESR). An aging study conducted using a five-level, two-factor experimental design showed the effects of temperature, voltage, and time on capacitor properties. After 12000 test hours, the largest capacitance change was a 30% decrease. It occurred at 40% of the rated voltage. ESR was stable throughout the investigated parameter space. No failures were observed during more than 500000 part-hours of testing. >
TL;DR: In this article, the rates of corrosion of calcium, 2% lithium, and calcium-10% antimony anodes were studied in calcium/thionyl chloride cells by means of impedance spectroscopy and dc electrode polarization.
Abstract: The rates of corrosion of calcium, calcium-2% lithium, and calcium-10% antimony anodes were studied in calcium/thionyl chloride cells by means of impedance spectroscopy and dc electrode polarization. Cell impedance was modeled by a circuit comprising a series resistance, a parallel resistance, and capacitance representing the CaCl 2 solid electrolyte interphase (SEI) on the calcium anode surface, and a parallel resistance and constant-phase element representing the double layer