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Anabela Veloso
Researcher at Katholieke Universiteit Leuven
Publications - 190
Citations - 2175
Anabela Veloso is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: CMOS & Metal gate. The author has an hindex of 22, co-authored 164 publications receiving 1794 citations.
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Journal ArticleDOI
Vertical GAAFETs for the Ultimate CMOS Scaling
D. Yakimets,Geert Eneman,P. Schuddinck,Trong Huynh Bao,Marie Garcia Bardon,Praveen Raghavan,Anabela Veloso,Nadine Collaert,Abdelkarim Mercha,Diederik Verkest,Aaron Thean,Kristin De Meyer +11 more
TL;DR: It is demonstrated that FinFets fail to maintain the performance at scaled dimensions, while VFETs demonstrate good scalability and eventually outperform lateral devices both in speed and power consumption.
Proceedings ArticleDOI
Review of FINFET technology
TL;DR: Although at single transistor and small circuits level, FINFET technology has been demonstrated to be an attractive option for advanced technology nodes, there are still important challenges to face like reduction of access resistance and the implementation of strain boosters in both NMOS and PMOS FinFET devices.
Proceedings ArticleDOI
The Complementary FET (CFET) for CMOS scaling beyond N3
J. Ryckaert,P. Schuddinck,Pieter Weckx,G. Bouche,Benjamin Vincent,Jeffrey Smith,Yasser Sherazi,Arindam Mallik,Hans Mertens,Steven Demuynck,T. Huynh Bao,Anabela Veloso,Naoto Horiguchi,Anda Mocuta,Dan Mocuta,Juergen Boemmels +15 more
TL;DR: The complementary FET (CFET) device consisting of a stacked n-type vertical sheet on a p-type fin is evaluated in a design-technology co-optimization (DTCO) framework and can eventually outperform the finFET device and meet the N3 targets in power and performance.
Journal ArticleDOI
Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
Jorge A. Kittl,M. A. Pawlak,Anne Lauwers,Caroline Demeurisse,Karl Opsomer,K.G. Anil,C. Vrancken,M.J.H. van Dal,Anabela Veloso,Stefan Kubicek,Philippe Absil,Karen Maex,Serge Biesemans +12 more
TL;DR: In this article, a complete determination of the effective work functions (WF) of NiSi, NiO/sub 2/Si and Ni/sub 3/Si on HfSiON pMOSFETs is presented.
Journal ArticleDOI
Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics
Maria Toledano-Luque,B. Kaczer,Eddy Simoen,Ph. J. Roussel,Anabela Veloso,Tibor Grasser,Guido Groeseneken +6 more
TL;DR: In this article, individual traps are studied in n-channel SiO"2/HfSiO FETs after positive gate stress to complement previous studies performed on SiO(N).