E
Enrico Bellotti
Researcher at Boston University
Publications - 212
Citations - 5163
Enrico Bellotti is an academic researcher from Boston University. The author has contributed to research in topics: Monte Carlo method & Impact ionization. The author has an hindex of 33, co-authored 212 publications receiving 4350 citations. Previous affiliations of Enrico Bellotti include Georgia Institute of Technology & Georgia Tech Research Institute.
Papers
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
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Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
İsmail H. Oğuzman,İsmail H. Oğuzman,Enrico Bellotti,Kevin F. Brennan,Ján Kolník,R. Wang,P. Paul Ruden +6 more
TL;DR: In this paper, the first calculations of hole initiated interband impact ionization in bulk zincblende and wurtzite phase GaN are presented using an ensemble Monte Carlo simulation including full details of all of the relevant valence bands, derived from an empirical pseudopotential approach, for each crystal type.
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On the feasibility of p-type Ga2O3
TL;DR: In this paper, various cation substitutional dopants in Ga2O3 were investigated for the possibility of p-type conductivity using density functional theory and hybrid functional calculations.
Journal ArticleDOI
Ensemble Monte Carlo study of electron transport in wurtzite InN
TL;DR: In this paper, the first five conduction bands derived from the pseudopotential method and a numerically calculated impact ionization transition rate using a wave-vector-dependent dielectric function were studied using an ensemble Monte Carlo method.