Journal ArticleDOI
Investigation of resistive switching behaviours in WO3-based RRAM devices
Yingtao Li,Yingtao Li,Shibing Long,HangBing Lü,Qi Liu,Qin Wang,Yan Wang,Yan Wang,Sen Zhang,Wentai Lian,Su Liu,Ming Liu +11 more
TLDR
In this paper, a resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature.Abstract:
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.read more
Citations
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Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review
TL;DR: In this article, the authors have summarized the mechanism and performance of metal oxide based resistive switching memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect and valence change memory effect (VCM).
Journal ArticleDOI
Analog‐Type Resistive Switching Devices for Neuromorphic Computing
Journal ArticleDOI
Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO3/γ-Fe2O3]/FTO device
TL;DR: In this paper, the magnetic-field controlled resistive switching behaviors in the Ag/[BiFeO3/γ-Fe2O3]/FTO structure were observed.
Journal ArticleDOI
An overview of resistive random access memory devices
TL;DR: In this article, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed.
Journal ArticleDOI
Physical principles and current status of emerging non-volatile solid state memories
Lei Wang,Ci-Hui Yang,Jing Wen +2 more
TL;DR: The physical principles of flash memories and their technical challenges that affect the ability to enhance the storage capacity are reviewed, and a detailed discussion of novel technologies that can extend the storage density offlash memories beyond the commonly accepted limits are presented.
References
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Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
TL;DR: In this paper, the authors describe the characteristics of W-(Cu/SiO2)-Cu programmable metallization cell (PMC) devices formed by the thermal diffusion of Cu into deposited SiO2.
Journal ArticleDOI
Identification of a determining parameter for resistive switching of TiO2 thin films
Christina Rohde,Christina Rohde,Byung Joon Choi,Doo Seok Jeong,Seol Choi,Jin Shi Zhao,Cheol Seong Hwang +6 more
TL;DR: In this paper, an electric-pulse-induced resistive switching of 43nm thick TiO2 thin films grown by metalorganic chemical vapor deposition was studied by currentvoltage (I-V) and constant voltage-time measurements.
Journal ArticleDOI
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
TL;DR: In this paper, the authors investigated the kinetics involved in the programming operation (i.e., transition from the high resistance to the low resistance state), which occurs by voltage-driven ion migration and electrochemical deposition, and results in CF formation and growth.
Journal ArticleDOI
Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
TL;DR: In this paper, an exponential dependence of the switching rate on the switching voltage and no significant thickness dependence in the range from 5 to 20nm SiO2 was observed, indicating that the cathodic electrodeposition represents the rate-limiting step of switching kinetics.