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Timothy E. Glassman
Researcher at Intel
Publications - 18
Citations - 1245
Timothy E. Glassman is an academic researcher from Intel. The author has contributed to research in topics: Layer (electronics) & Capacitor. The author has an hindex of 7, co-authored 18 publications receiving 1168 citations.
Papers
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Proceedings ArticleDOI
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
C. Auth,C. Allen,A. Blattner,Daniel B. Bergstrom,Mark R. Brazier,M. Bost,M. Buehler,V. Chikarmane,Tahir Ghani,Timothy E. Glassman,R. Grover,W. Han,D. Hanken,Michael L. Hattendorf,P. Hentges,R. Heussner,J. Hicks,D. Ingerly,Pulkit Jain,S. Jaloviar,Robert James,David Jones,J. Jopling,Subhash M. Joshi,C. Kenyon,Huichu Liu,R. McFadden,B. McIntyre,J. Neirynck,C. Parker,L. Pipes,Ian R. Post,S. Pradhan,M. Prince,S. Ramey,T. Reynolds,J. Roesler,J. Sandford,J. Seiple,Pete Smith,Christopher D. Thomas,D. Towner,T. Troeger,Cory E. Weber,P. Yashar,K. Zawadzki,Kaizad Mistry +46 more
TL;DR: In this paper, a 22nm generation logic technology is described incorporating fully-depleted tri-gate transistors for the first time, which provides steep sub-threshold slopes (∼70mV/dec) and very low DIBL ( ∼50m V/V).
Proceedings ArticleDOI
45nm High-k + metal gate strain-enhanced transistors
C. Auth,Annalisa Cappellani,J.-S. Chun,A. Dalis,Alison Davis,Tahir Ghani,G. Glass,Timothy E. Glassman,Michael K. Harper,Michael L. Hattendorf,P. Hentges,S. Jaloviar,Subhash M. Joshi,Jason Klaus,K. Kuhn,D. Lavric,M. Lu,H. Mariappan,Kaizad Mistry,B. Norris,Nadia M. Rahhal-Orabi,Pushkar Ranade,J. Sandford,Lucian Shifren,V. Souw,K. Tone,F. Tambwe,A. Thompson,D. Towner,T. Troeger,P. Vandervoorn,Charles H. Wallace,J. Wiedemer,Christopher J. Wiegand +33 more
TL;DR: In this article, two key process features that are used to make 45 nm generation metal gate + high-k gate dielectric CMOS transistors are highlighted in this paper.
Patent
Metal-insulator-metal (mim) capacitor with insulator stack having a plurality of metal oxide layers
TL;DR: In this paper, metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described, and the MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.
Patent
Conformal low temperature hermetic dielectric diffusion barriers
TL;DR: In this article, the authors proposed a conformal hermetic diffusion barrier for 3D topography, which includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with conformality and density greater than can be achieved in a conventional silicon dioxide-based film.
Proceedings ArticleDOI
Low-k interconnect stack with metal-insulator-metal capacitors for 22nm high volume manufacturing
D. Ingerly,A. Agrawal,R. Ascazubi,A. Blattner,M. Buehler,V. Chikarmane,B. Choudhury,F. Cinnor,C. Ege,C. Ganpule,Timothy E. Glassman,R. Grover,P. Hentges,J. Hicks,David Jones,A. Kandas,H. Khan,N. Lazo,K. S. Lee,H. Liu,A. Madhavan,R. McFadden,T. Mule,D. Parsons,P. Parthangal,Sudarshan Rangaraj,D. Rao,J. Roesler,A. Schmitz,Manvi Sharma,J. Shin,Y. Shusterman,N. Speer,P. Tiwari,Guotao Wang,P. Yashar,Kaizad Mistry +36 more
TL;DR: In this paper, the authors describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects.