Z
Zhong Chen
Researcher at Nanyang Technological University
Publications - 1114
Citations - 37928
Zhong Chen is an academic researcher from Nanyang Technological University. The author has contributed to research in topics: Chemistry & Catalysis. The author has an hindex of 80, co-authored 1000 publications receiving 28171 citations. Previous affiliations of Zhong Chen include Institute of High Performance Computing Singapore & National Institute of Education.
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Spatially encoded ultrafast high-resolution 2D homonuclear correlation spectroscopy in inhomogeneous fields
TL;DR: Two new pulse sequences tracking the differences of the precession frequencies of two coupled spins are proposed to ultrafast achieve high-resolution 2D correlation spectroscopy (COSY and TOCSY) in inhomogeneous fields in a single scan.
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Maximal rectification ratios for idealized bi-segment thermal rectifiers
TL;DR: This work has discovered, idealized, and derived the ultimate limit of such rectification ratios, which are partially validated by numerical simulations, experiments, and micro-scale Hamiltonian-oscillator analyses.
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The essential work of fracture and JR curves for the double cantilever beam specimen: an examination of elastoplastic crack propagation
TL;DR: In this paper, the propagation of a crack in a double-cantilever beam (DCB) geometry where there is extensive remote plastic flow both preceding and accompanying fracture is analyzed.
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Solar-driven hydrogen generation coupled with urea electrolysis by an oxygen vacancy-rich catalyst
Mengqi Yao,Mengqi Yao,Junyu Ge,Baolong Sun,Jun Hu,See Wee Koh,Yunxing Zhao,Jipeng Fei,Zixu Sun,Wei Hong,Zhong Chen,Wencheng Hu,Hong Li,Hong Li +13 more
TL;DR: In this article, a self-supported electrocatalyst of nitrogen-doped nickel-iron oxyhydroxide derived from waste rusty iron foam is synthesized via an in situ ‘waste-to-value' synthetic route followed by an ammonia/argon plasma treatment, which reconstructs the surface of the catalyst to a 3D nanosheet-like porous network with abundant oxygen vacancies.
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The influence of temperature and dielectric materials on stress induced voiding in Cu dual damascene interconnects
TL;DR: In this paper, package level stress migration test of Cu dual-damascene interconnects in via-line structures was performed, and the effects of stressing temperature and dielectric materials on SIV behavior were investigated.