Gandhi Institute of Technology and Management

About: Gandhi Institute of Technology and Management is a education organization based out in Visakhapatnam, Andhra Pradesh, India. It is known for research contribution in the topics: Computer science & Heat transfer. The organization has 3392 authors who have published 4043 publications receiving 29139 citations. The organization is also known as: GITAM & GITAM College.

Flare-up rate in molars with periapical radiolucency in one-visit vs two-visit endodontic treatment.

Abstract: Purpose The objective of this study was to compare postobturation flare-ups following single and two-visit endodontic treatment of molar teeth with periapical radiolucency. Materials and methods A total of 100 patients with asymptomatic molar teeth with periapical radiolucency were selected. They were randomly allocated into two groups. Fifty patients received complete endodontic treatment in one-visit. Fifty patients received treatment by debridement and instrumentation at the first visit followed by obturation at the second visit. Results 10% of patients had flare-ups in the single visit group and 8% of patients had flare-ups in the two-visit group. Number of visits did not affect the success of endodontic treatment (p>0.05). Age, gender and tooth type had no effects on the occurrence of flare-ups regardless the number of visits (p>0.05). Conclusion One-visit endodontic treatment was as successful as two-visit endodontic treatment as evaluated by rate of flareups in asymptomatic molar teeth with periapical radiolucency.

Damping Behavior of Metal Matrix Composites

Abstract: In the present day scenario, materials with high damping capacity and good mechanical properties are significant to suppress mechanical vibrations. In pure metals or alloys, even though the mechanical properties are fairly good, the damping capacity was found to be stumpy. Composites are a better choice which simultaneously exhibits good mechanical properties and high damping values. In the present review, the damping behavior of metals, alloys and its composites is summarized and presented.

Statistical analysis of low-power SRAM cell structure

Abstract: The reduction of the channel length due to scaling increases the leakage current resulting in a major contribution to the static power dissipation. In this paper, a novel SRAM cell with eight transistors is being proposed to reduce the static hence total power dissipation. When compared to the conventional 6T SRAM and NC-SRAM cell, a significant reduction in the gate leakage current, static and total power dissipation is observed in the proposed SRAM along with higher stability. In the technique employed for the proposed SRAM cell, the operating voltage is reduced in idle mode. The technique led a reduction of 31.2 % in the total power dissipation, a reduction of 40.4 % on static power dissipation, almost without any change in the stability of the cell when compared to the conventional 6T SRAM cell topology. Cadence Virtuoso tools are used for simulation with 90-nm CMOS process technology.