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Proceedings ArticleDOI

A 60-GHz 1.65mW 25.9% locking range multi-order LC oscillator based injection locked frequency divider in 65nm CMOS

TLDR
A 60-GHz injection-locked frequency divider fabricated in 65nm CMOS and operating at 1.2V consumes 1.65mW excluding buffers and biasing circuits, and has a measured locking range of 48.5–62.9GHz with 0dBm input power.
Abstract
A 60-GHz injection-locked frequency divider (ILFD) fabricated in 65nm CMOS and operating at 1.2V consumes 1.65mW excluding buffers and biasing circuits, and has a measured locking range of 48.5–62.9GHz (25.9%) with 0dBm input power. The core ILFD area is 0.0157mm2. The large locking range is attributed to the use of the multi-order LC oscillator topology.

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Citations
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Journal ArticleDOI

Analysis and Design of Ultra-Wideband mm-Wave Injection-Locked Frequency Dividers Using Transformer-Based High-Order Resonators

TL;DR: A transformer-based high-order resonator is proposed to improve the locking range (LR) of the millimeter-wave injection-locked frequency dividers (ILFDs) and the operating principles of the proposed high- order resonator are analyzed based on their flattened phase response.
Journal ArticleDOI

Analysis and Design of a 2.9-mW 53.4–79.4-GHz Frequency-Tracking Injection-Locked Frequency Divider in 65-nm CMOS

TL;DR: A frequency-tracking technique is proposed to enhance the locking range of millimeter-wave injection-locked frequency dividers (ILFD) and an improved model is introduced for direct-injection ILFDs, based on which both the phase and gain conditions are analyzed and discussed.
Book ChapterDOI

IV. In Conclusion

TL;DR: The question arises of how the position of Balochi among North Western Iranian languages of past and present times may be described in the light of the issues raised.
Journal ArticleDOI

Analysis and Design of Wide-Band Millimeter-Wave Transformer-Based VCO and ILFDs

TL;DR: A switched-transformer VCO (ST-VCO) based on dual-band topology is proposed to increase the frequency tuning range and transformer-distribution ILFDs (TD-ILFDs) are demonstrated to achieve much improved frequency locking range with compact chip area and low power consumption.
Journal ArticleDOI

Analysis and Design of a 0.6 V 2.2 mW 58.5-to-72.9 GHz Divide-by-4 Injection-Locked Frequency Divider With Harmonic Boosting

TL;DR: A locking-range enhancement technique is proposed by employing a properly-designed 4th-order LC tank to boost the 3rd-order harmonic tone at the output to increase the injection efficiency and thus the locking range of divide-by-4 injection-locked frequency dividers at millimeter-wave frequencies.
References
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Journal ArticleDOI

A 40-GHz frequency divider in 0.18-/spl mu/m CMOS technology

TL;DR: In this article, a regenerative divide topology is introduced that employs resonance techniques by means of on-chip spiral inductors to tune out the device capacitances, achieving a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.
Journal ArticleDOI

A Zero-IF 60 GHz 65 nm CMOS Transceiver With Direct BPSK Modulation Demonstrating up to 6 Gb/s Data Rates Over a 2 m Wireless Link

TL;DR: A directly modulated, 60 GHz zero-IF transceiver architecture suitable for single-carrier, low-power, multi-gigabit wireless links in nanoscale CMOS technologies that requires no upconversion of the baseband signals in the transmitter and no analog-to-digital conversion in the receiver, thus minimizing system complexity and power consumption.
Proceedings ArticleDOI

70GHz CMOS Harmonic Injection-Locked Divider

TL;DR: A 70GHz CMOS harmonic injection-locked divider (HILD) is presented, where a third-harmonic mixer is realized by a differential-voltage-driven MOSFET.
Journal ArticleDOI

A 0.8-mW 55-GHz Dual-Injection-Locked CMOS Frequency Divider

TL;DR: In this paper, the authors proposed a dual-injection-locking technique to enhance the locking range of resonator-based frequency dividers, which achieved a frequency coverage from 35.7 to 54.9 GHz.
Proceedings ArticleDOI

40GHz Wide-Locking-Range Regenerative Frequency Divider and Low-Phase-Noise Balanced VCO in 0.18μm CMOS

TL;DR: A 40GHz wide-locking-range frequency divider and a low-phase-noise VCO are implemented in 0.18mum CMOS technology, demonstrating a locking range of 10.6GHz with 0dBm input power and phase noise of -108.65dBc/Hz at 1MHz offset.
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