Journal ArticleDOI
A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage
TLDR
In this article, a double-diffused metal-oxide-semiconductor-field effect transistor (LDMOSFET) with a modified buried layer is proposed to improve breakdown voltage and self-heating effects.Abstract:
In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart.read more
Citations
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Journal ArticleDOI
A Thermal-Aware Device Design Considerations for Nanoscale SOI and Bulk FinFETs
TL;DR: In this article, the thermal performance characteristics of fin-shaped FETs (FinFETs) are studied and analyzed for sub-22-nm technologies using the well-calibrated TCAD simulations.
Journal ArticleDOI
A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement
TL;DR: In this article, the authors proposed a PBO-PSOI structure for LDMOSFETs with periodic buried oxide layer (PBO) for enhancing breakdown voltage and self-heating effects (SHEs).
Journal ArticleDOI
SOI LDMOSFET with Up and Down Extended Stepped Drift Region
TL;DR: In this article, an up and down extended stepped drift SOI (UDESD-SOI) structure was proposed to increase the breakdown voltage and decrease the ON resistance of LDMOSFETs.
Journal ArticleDOI
A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region
TL;DR: In this paper, a dual protruded silicon dioxide in the drift region of LDMOS (DP-LDMOS) is proposed which creates new peaks in the electric field profile and an improvement of the breakdown voltage.
Journal ArticleDOI
Comprehensive study of a 4H–SiC MES–MOSFET
TL;DR: In this paper, the authors studied the enhancement of the breakdown voltage in the 4H-SiC MES-MOSFET with Schottky gates at the interface of the active region and substrate.
References
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Proceedings ArticleDOI
High voltage thin layer devices (RESURF devices)
J.A. Appels,H.M.J. Vaes +1 more
TL;DR: The RESURF (Reduced SURface Field) as discussed by the authors is a diode-based diode structure for high voltage devices with very thin epitaxial or implanted layers, where crucial changes in the electric field distribution occur at or at least near the surface.
Proceedings ArticleDOI
Extension of RESURF principle to dielectrically isolated power devices
Y.S. Huang,Bantval Jayant Baliga +1 more
TL;DR: In this article, the RESURF principle has been extended to dielectrically isolated power devices including the effect of the formation of an inversion layer under the isolating oxide.
Journal ArticleDOI
Optimization of RESURF LDMOS transistors: an analytical approach
A. Parpia,C.A.T. Salama +1 more
TL;DR: In this paper, the highvoltage behavior of the lateral double-diffused MOS transistor (LDMOST) was investigated using an analytical approach and a strategy for the optimization of RESURF LDMOSTs was developed.
PatentDOI
SOI power device
TL;DR: In this paper, the equipotential lines within a thin-film power device are more evenly distributed by providing a thick buried oxide layer ( / 3-10 microns) beneath the device drift region.
Journal ArticleDOI
New thin-film power MOSFETs with a buried oxide double step structure
Baoxing Duan,Bo Zhang,Zhaoji Li +2 more
TL;DR: In this paper, a new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS).
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