Journal ArticleDOI
A simple subcircuit extension of the BSIM3v3 model for CMOS RF design
TLDR
In this paper, an extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated, and detailed comparisons of the y and s parameters with both two-dimensional device simulations and measurement data are presented.Abstract:
An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y and s parameters with both two-dimensional device simulations and measurement data are presented. A procedure is developed to extract the values of two lumped resistors-the only added elements. The non-quasi-static and substrate effects can be modeled with these two resistors to significantly improve the model accuracy up to a frequency of 10 GHz, which is about 70% of the f/sub T/ of the 0.5 /spl mu/m NMOS transistor.read more
Citations
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Journal ArticleDOI
A 24-GHz CMOS front-end
Xiang Guan,Ali Hajimiri +1 more
TL;DR: In this paper, the first 24 GHz CMOS front-end in a 0.18/spl mu/m process was reported, which consists of a low-noise amplifier (LNA) and a mixer and downconverts an RF input at 24 GHz to an IF of 5 GHz.
Journal ArticleDOI
A 0.5-8.5 GHz fully differential CMOS distributed amplifier
Hee-Tae Ahn,David J. Allstot +1 more
TL;DR: In this article, a fully integrated fully differential distributed amplifier with 5.5 dB pass-band gain and 8.5 GHz unity-gain bandwidth is described, which eliminates the source degeneration effects of parasitic interconnect, bond wire, and package inductors.
Journal ArticleDOI
Compact Noise Models for MOSFETs
TL;DR: A physical understanding of both intrinsic and extrinsic noise mechanisms in a MOSFET is developed in this article, where a survey of current public domain MOS models is presented, and a lack of comprehensive coverage of noise models is noted.
Journal ArticleDOI
$Ka$ -Band Low-Loss and High-Isolation Switch Design in 0.13- $\mu{\hbox {m}}$ CMOS
Byung-Wook Min,Gabriel M. Rebeiz +1 more
TL;DR: In this paper, the authors present designs and measurements of Ka-band single-pole single-throw (SPST) and singlepole double throw (SPDT) 0.13-CMOS switches.
Journal ArticleDOI
A simple and accurate method for extracting substrate resistance of RF MOSFETs
TL;DR: In this article, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a single resistor, and the extraction results from the measured network parameters are presented for various bias conditions.
References
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Book
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TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
Impact of distributed gate resistance on the performance of MOS devices
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Journal ArticleDOI
MOSFET modeling for analog circuit CAD: problems and prospects
Yannis Tsividis,K. Suyama +1 more
TL;DR: The requirements for good MOSFET modeling as they apply to usage in analog and mixed analog-digital design are discussed, and it is argued that most CAD models today fail tests even for simple, long-channel devices at room temperature.
Journal ArticleDOI
Microwave CMOS-device physics and design
TL;DR: A qualitative understanding of the microwave characteristics of MOS transistors is provided in this article, which is directed toward helping analog IC circuit designers create better front-end radio-frequency CMOS circuits.
Proceedings ArticleDOI
An effective gate resistance model for CMOS RF and noise modeling
TL;DR: In this paper, a physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices.