An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator With a Defected-Ground Structure

TLDR: In this paper, an on-chip bandpass filter (BPF) is designed and fabricated in a 0.13- $\mu \text{m}$ SiGe (Bi)-CMOS technology, which consists of a broadsidecoupled meander-line resonator (BCMLR) in conjunction with a defected ground structure (DGS).

Abstract: An on-chip bandpass filter (BPF) is designed and fabricated in a 0.13- $\mu \text{m}$ SiGe (Bi)-CMOS technology. This BPF consists of a broadside-coupled meander-line resonator (BCMLR) in conjunction with a defected-ground structure (DGS). By simply grounding a BCMLR, the resonator can be converted into a BPF. Further applying a DGS to this BPF, an additional transmission zero can be generated in the high-frequency band. To understand the fundamentals of this design, an $LC$ -equivalent circuit is given for investigation of the transmission zeros and poles. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 18%. The minimum insertion loss is 2.6 dB, while the maximum stopband attenuation is 44 dB. The chip size, excluding the pads, is only 0.038 mm2 ( $0.126\times0.3$ mm $^{2}$ ).