Journal ArticleDOI
Analysis on switching mechanism of graphene oxide resistive memory device
TLDR
In this paper, the switching mechanism of the graphene oxide memory was investigated through a comprehensive study on the switching phenomena. And the switching operation of GORAM was found to be governed by dual mechanism of oxygen migration and Al diffusion.Abstract:
Recently, a flexible resistive switching memory device using graphene oxide was successfully demonstrated. In this work, the new findings on the switching mechanism of the graphene oxide memory are presented through a comprehensive study on the switching phenomena. It has been found that the switching operation of graphene oxide resistive switching memory (RRAM) is governed by dual mechanism of oxygen migration and Al diffusion. However, the Al diffusion into the graphene oxide is the main factor to determine the switching endurance property which limits the long term lifetime of the device. The electrode dependence on graphene oxide RRAM operation has been analyzed as well and is attributed to the difference in surface roughness of graphene oxide for the different bottom electrodes.read more
Citations
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Journal ArticleDOI
Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials
TL;DR: This tutorial review will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices, and demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistiveMemory devices.
Journal ArticleDOI
Nonvolatile Memories Based on Graphene and Related 2D Materials.
Simone Bertolazzi,Paolo Bondavalli,Stephan Roche,Stephan Roche,Tamer San,Sung-Yool Choi,Luigi Colombo,Francesco Bonaccorso,Paolo Samorì +8 more
TL;DR: An overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories.
Journal ArticleDOI
Graphene and Related Materials for Resistive Random Access Memories
TL;DR: Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs) as mentioned in this paper, and the performance of a number of RRAM prototypes using GRMs is summarized Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media.
Journal ArticleDOI
Nanoionics-Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications
TL;DR: A critical overview of the proposed nano-ionic mechanisms for memristive switching is given in this paper, focusing particularly on providing fundamental insights into the strategies for regulating the adaptive memrisive characteristics of devices that resemble the behaviors of biological synapses, which is an element of neural networks.
Journal ArticleDOI
Fluorinated graphene as high performance dielectric materials and the applications for graphene nanoelectronics.
Kuan I. Ho,Chi-Hsien Huang,Jia Hong Liao,Wenjing Zhang,Lain-Jong Li,Chao-Sung Lai,Ching Yuan Su +6 more
TL;DR: It is found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C and show excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices.
References
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Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Graphene oxide thin films for flexible nonvolatile memory applications.
Hu Young Jeong,Jong Yun Kim,Jong Yun Kim,Jeong Won Kim,Jin Ok Hwang,Ji-Eun Kim,Jeong Yong Lee,Tae Hyun Yoon,Byung Jin Cho,Sang Ouk Kim,Rodney S. Ruoff,Sung-Yool Choi +11 more
TL;DR: The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy.