Journal ArticleDOI
Chemical interface analysis of as grown HfO2 ultrathin films on SiO2
C. Maunoury,K. Dabertrand,Eugénie Martinez,M. Saadoune,D. Lafond,F. Pierre,Olivier Renault,Sandrine Lhostis,P Bailey,Tcq Noakes,D. Jalabert +10 more
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I Irene et al. as discussed by the authors investigated the chemical composition of the interfacial region of HfO2 deposited on a SiO2∕Si(100) substrate by pulsed liquid injection metal organic chemical vapor deposition at 430 and 550°C.Abstract:
The quality of the interface between a HfO2 high-k gate dielectric and the Si substrate directly influences its electrical properties The chemical composition of the interfacial region of HfO2 deposited on a SiO2∕Si(100) substrate by pulsed liquid injection metal organic chemical vapor deposition at 430 and 550°C was investigated by medium energy ion scattering, angular resolved x-ray photoemission spectroscopy analysis, and high resolution transmission electron microscopy It is shown that the HfO2∕SiO2 interface is abrupt with low roughness and no silicate The interface roughness with SiO2 is found to be close to that generally measured in silicon technology (silicon oxide above silicon substrates) [E A Irene, Solid-State Electron, 45, 1207 (2001)] The analysis of the experimental results indicates that the deposition technique does not lead to the formation of an extended silicate layer at the HfO2∕SiO2 interfaceread more
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors
TL;DR: The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec(-1), high I(on)/I(off) ratios of 10(5)-10(7), contact resistance down to 700 Ω cm, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.
Journal ArticleDOI
π‐σ‐Phosphonic Acid Organic Monolayer/Sol–Gel Hafnium Oxide Hybrid Dielectrics for Low‐Voltage Organic Transistors
Journal ArticleDOI
Interfacial and structural properties of sputtered HfO2 layers
Gulnur Aygun,Ilker Yildiz +1 more
TL;DR: In this paper, the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable, and the formation is highly affected by the growth parameters such as sputtering power, O2/Ar gas ratio during sputtering, sputtering time, and substrate temperature.
Journal ArticleDOI
Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric
TL;DR: A simple and robust approach is demonstrated that could be used to achieve low-voltage operation with solution-processed technique and shows high electric performance with high hole mobility.
References
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
The electronic structure at the atomic scale of ultrathin gate oxides
TL;DR: In this paper, the authors used electron-energy-loss spectroscopy in a scanning transmission electron microscope to measure the chemical composition and electronic structure, at the atomic scale, across gate oxides as thin as one nanometre.
Proceedings ArticleDOI
SIMNRA, a simulation program for the analysis of NRA, RBS and ERDA
TL;DR: SIMNRA as discussed by the authors is a Microsoft Windows 95/Windows NT program with fully graphical user interface for the simulation of non-Rutherford backscattering, nuclear reaction analysis and elastic recoil detection analysis with MeV ions.
Journal ArticleDOI
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
Journal ArticleDOI
Structure and stability of ultrathin zirconium oxide layers on Si(001)
TL;DR: In this paper, the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy was examined.