Journal ArticleDOI
Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy
TLDR
In this paper, compositional fluctuations in GaN/GaInN/GAN double heterostructures investigated by photoluminescence excitation and resonant Raman spectroscopy are reported.Abstract:
We report on compositional fluctuations in GaN/GaInN/GaN double heterostructures investigated by photoluminescence excitation and resonant Raman spectroscopy. The energy and line-shape of both luminescence and longitudinal optical (LO) phonon Raman peaks strongly depend on excitation energy due to selective excitation of regions with different In content. For a given excitation energy, luminescence from In-rich regions takes place and in addition, with increasing sample temperature, resonantly excited luminescence from regions of lower In content is superposed. Thus, the luminescence strongly broadens and on average shifts to higher energies with increasing temperature. The spectral variation of the photoluminescence and Raman cross sections is determined and correlated with the GaInN absorbance as measured by photothermal deflection spectroscopy.read more
Citations
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Journal ArticleDOI
On the origin of band-tails in kesterite
Germain Rey,Gerardo Larramona,S. Bourdais,Christophe Chone,Bruno Delatouche,Alain Jacob,Gilles Dennler,Susanne Siebentritt +7 more
TL;DR: In this paper, the authors show that the band-tailing originates mainly from band-gap fluctuations attributable to chemical composition variations at nanoscale; while electrostatic fluctuations play a lesser role.
Journal ArticleDOI
Raman-scattering study of the InGaN alloy over the whole composition range
Sergi Hernández,Ramón Cuscó,David Pastor,Lluís Artús,K.P. O'Donnell,Robert W. Martin,Ian Watson,Yasushi Nanishi,E. Calleja +8 more
TL;DR: In this paper, Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model.
Journal ArticleDOI
Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers
TL;DR: In this paper, the behavior of the A1(LO) phonon mode of relaxed and pseudomorphic InxGa1−xN epilayers, at the surface, is investigated by Raman spectroscopy.
Journal ArticleDOI
Experimental studies of lattice dynamical properties in indium nitride
TL;DR: In this article, the lattice dynamical properties of novel semiconductor InN thin films are reviewed and some prospects on Raman scattering studies in the related materials and structures are presented.
Journal ArticleDOI
Crystalline, Phononic and Electronic properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy
Claudia Fasolato,Marta De Luca,Doriane Djomani,Laetitia Vincent,Charles Renard,Giulia Di Iorio,Vincent Paillard,Michele Amato,Riccardo Rurali,Ilaria Zardo +9 more
TL;DR: The versatility of Raman spectroscopy is demonstrated and it is shown that it can be used to determine the main crystalline, phononic, and electronic properties of the most challenging type of heterostructure (a polytypic, nanoscale heterost structure with constant material composition).
References
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Journal ArticleDOI
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong-Hoon Cho,G. H. Gainer,Arthur J. Fischer,J. J. Song,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars +6 more
TL;DR: In this article, temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition were performed.
Journal ArticleDOI
Electron–vibration coupling in semiconductor clusters studied by resonance Raman spectroscopy
TL;DR: In this article, the resonance Raman spectrum of CdSe clusters was measured and the incident photons were resonant with the HOMO-LUMO transition in the clusters, and the strength of the coupling between the lowest electronic excited state and the LO vibration was found to be 20 times weaker in these clusters than in the bulk solid.
Journal ArticleDOI
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
Kazumasa Hiramatsu,Yasutoshi Kawaguchi,Masaya Shimizu,Nobuhiko Sawaki,Tsvetanka Zheleva,Robert F. Davis,H. Tsuda,Wataru Taki,Noriyuki Kuwano,Kensuke Oki +9 more
TL;DR: In this article, it is suggested that indium atoms are excluded from the InGaN lattice during the early growth stages to reduce the deformation energy from the lattice mismatch.
Journal ArticleDOI
Cascade Theory of Inelastic Scattering of Light
Richard M. Martin,C. M. Varma +1 more
Journal ArticleDOI
An analysis of temperature dependent photoluminescence line shapes in InGaN
Kie Leong Teo,John Colton,Peter Y. Yu,Eicke R. Weber,Ming-Fu Li,Wei Liu,Kazuo Uchida,Hiroki Tokunaga,Nakao Akutsu,Koh Matsumoto +9 more
TL;DR: In this paper, the authors deduced a localization energy of ∼7 meV as compared with an activation energy from thermal quenching of the photoluminescence (PL) intensity.