Journal ArticleDOI
Crystalline Oxides on Silicon
James W. Reiner,Alexie M. Kolpak,Y. Segal,Kevin F. Garrity,Sohrab Ismail-Beigi,Chong H. Ahn,Frederick J. Walker +6 more
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TLDR
This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform and describes the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface.Abstract:
This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface. An interdisciplinary approach involving MBE, advanced real-space structural characterization, and first-principles theory has led to a detailed understanding of the process by which the interface between crystalline oxides and silicon forms, the resulting structure of the interface, and the link between structure and functionality. Potential applications in electronics and photonics are also discussed.read more
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Electric field control of magnetism in multiferroic heterostructures
TL;DR: In this article, the authors review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components.
Journal ArticleDOI
Giant Piezoelectricity on Si for Hyperactive MEMS
Seung Hyub Baek,Jonghoo Park,D. M. Kim,Vladimir A. Aksyuk,Rasmi R. Das,Sang Don Bu,D. A. Felker,J. Lettieri,V. Vaithyanathan,S. S. N. Bharadwaja,Nazanin Bassiri-Gharb,Yong Chen,Haiping Sun,Chad M. Folkman,Ho Won Jang,Dustin J. Kreft,Stephen K. Streiffer,Ramamoorthy Ramesh,Xiaoqing Pan,Susan Trolier-McKinstry,Darrell G. Schlom,Darrell G. Schlom,Mark Rzchowski,Robert H. Blick,Chang-Beom Eom +24 more
TL;DR: In this paper, the authors synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of a template layer with superior piezoelectric coefficients (e31,f = −27 ± 3 coulombs per square meter).
Journal Article
Giant piezoelectricity on Si for hyper-active MEMS
TL;DR: These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting and incorporated into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals.
Journal Article
Electric field control of magnetism in multiferroic heterostructures
TL;DR: Charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.
Journal ArticleDOI
A strong electro-optically active lead-free ferroelectric integrated on silicon
Stefan Abel,Thilo Stöferle,Chiara Marchiori,C. Rossel,Marta D. Rossell,Rolf Erni,Daniele Caimi,Marilyne Sousa,Alexei Chelnokov,Bert Jan Offrein,Jean Fompeyrine +10 more
TL;DR: The electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates are reported, and a large effective Pockels coefficient is extracted, five times larger than in the current standard material for electro- optical devices, lithium niobate.
References
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Journal ArticleDOI
Self-Consistent Equations Including Exchange and Correlation Effects
Walter Kohn,L. J. Sham +1 more
TL;DR: In this paper, the Hartree and Hartree-Fock equations are applied to a uniform electron gas, where the exchange and correlation portions of the chemical potential of the gas are used as additional effective potentials.
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Inhomogeneous Electron Gas
P. C. Hohenberg,Walter Kohn +1 more
TL;DR: In this article, the ground state of an interacting electron gas in an external potential was investigated and it was proved that there exists a universal functional of the density, called F[n(mathrm{r})], independent of the potential of the electron gas.
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
TL;DR: A model interface is examined between two insulating perovskite oxides—LaAlO3 and SrTiO3—in which the termination layer at the interface is controlled on an atomic scale, presenting a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.