Proceedings ArticleDOI
Design and pull-in voltage optimization of series metal-to-metal contact RF MEMS switch
Mahesh Angira,G. Meenakshi Sundram,Kamaljit Rangra +2 more
- pp 1-4
TLDR
In this article, the pull-in voltage of metal-to-metal contact series rf-MEMS switch is optimized for generating a force to obtain a stable contact resistance.Abstract:
This paper presents the design, analysis and simulation of metal-to metal contact series rf-MEMS switch for its pull-in voltage optimization Fixed — fixed flexure is used as a switching element and the Pull-in voltage is optimized for generating a force to obtain a stable contact resistance Au is used as the contact material The simulated value of the pull-in voltage (V pi ) is approximately 1020 V At the pull-in voltage the area occupied under contact is 889 µm2 and the value of contact force is 184 µN The switch pull-in voltage value is optimized at a value of 23 V giving contact area of 924 µm2 and contact force of 3155 µNread more
References
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TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
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RF-MEMS switches for reconfigurable integrated circuits
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Proceedings ArticleDOI
Metal contact reliability of RF MEMS switches
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