Determination of interface trap capture cross sections using three-level charge pumping
N.S. Saks,Mario G. Ancona +1 more
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TLDR
In this paper, a modified three-voltage-level charge pumping (CP) technique is described for measuring interface trap parameters in MOSFETs, which can be used to determine not only interface trap densities but also to capture cross sections as a function of trap energy.Abstract:
A modified three-voltage-level charge pumping (CP) technique is described for measuring interface trap parameters in MOSFETs. Charge pumping (CP) is a technique for studying traps at the Si-SiO/sub 2/ interface in MOS transistors. In the CP technique, a pulse is applied to the gate of the MOSFET which alternately fills the traps with electrons and holes, thereby causing a recombination current I/sub cp/ to flow in the substrate. With this technique, interface trap capture cross sections for both electrons and holes may be determined as a function of trap energy in a single device. It is demonstrated that a modified three-level charge pumping method may be used to determine not only interface trap densities but also to capture cross sections as a function of trap energy. The trap parameters are obtained for both electrons and holes using a single MOSFET.read more
Citations
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Post-irradiation behavior of the interface state density and the trapped positive charge
TL;DR: In this article, the postirradiation behavior of the energy distribution of interface states, D/sub it/, and of the trapped positive charge, N/sub ot/, of MOS devices is studied.
Journal ArticleDOI
Modeling of SILC based on electron and hole tunneling. I. Transient effects
TL;DR: In this article, a detailed investigation of the steady-state and transient leakage currents in thin oxides is proposed, and the experimental data are compared with numerical results obtained from a model based on an inelastic trap-assisted tunneling process, which includes both electron and hole contributions.
Journal ArticleDOI
Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks
Dawei Heh,Chadwin D. Young,George A. Brown,P. Y. Hung,Alain C. Diebold,Gennadi Bersuker,Eric M. Vogel,Joseph Bernstein +7 more
TL;DR: In this article, a methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2∕HfO2 gate stacks.
Journal ArticleDOI
On the geometric component of charge-pumping current in MOSFETs
TL;DR: In this paper, a simple method of unambiguously determining the presence of any geometric component in a charge-pumping measurement by collecting this component at another node via a nearby junction is presented.
Journal ArticleDOI
In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique
D. Bauza,Y. Maneglia +1 more
TL;DR: In this article, the authors used the charge pumping technique to extract the depth concentration profile of traps situated in the oxide of metal-oxide-semiconductor (MOS) transistors, near and at the Si-SiO/sub 2/ interface.
References
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E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
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A reliable approach to charge-pumping measurements in MOS transistors
TL;DR: In this article, a new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented.
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Interface states in SiSiO2 interfaces
TL;DR: In this paper, a new technique was developed for analysis of the data which allows to obtain the density of states, the capture cross section, the surface potential and the dispersion parameter from the conductance and capacitance vs. frequency curves.
Journal ArticleDOI
A new charge pumping method of measuring Si‐SiO2 interface states
TL;DR: In this paper, a charge pumping technique is used to measure the density of interface states at the SiSiO2 interface, which is based on the charge pumping phenomenon and can be performed on a metaloxide-semiconductor transistor structure without the need for Shockley Hall-Read statistics.
Journal ArticleDOI
Electrical characteristics of the SiO2Si interface near midgap and in weak inversion
James A. Cooper,R.J. Schwartz +1 more
TL;DR: In this article, a general numerical model for the surface state branch of the SiO 2 Si interface in depletion was developed, and the electron capture cross-section was found to be relatively independent of energy through midgap and into weak inversion.