Directly modulated buried heterostructure DFB laser on SiO₂/Si substrate fabricated by regrowth of InP using bonded active layer.
TLDR
The fabrication method is a promising way to fabricate high-efficiency lasers at a low cost and the use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film.Abstract:
We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.read more
Citations
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Hybrid indium phosphide-on-silicon nanolaser diode
Guillaume Crosnier,Guillaume Crosnier,Dorian Sanchez,Sophie Bouchoule,Paul Monnier,Grégoire Beaudoin,Isabelle Sagnes,Rama Raj,Fabrice Raineri,Fabrice Raineri +9 more
TL;DR: In this article, an ultra-compact indium phosphide-on-silicon laser diode with low current threshold, high wall-plug efficiency and high integrability is demonstrated.
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III-V-on-Silicon Photonic Devices for Optical Communication and Sensing
Gunther Roelkens,Amin Abassi,Paolo Cardile,Utsav D. Dave,Andreas De Groote,Yannick De Koninck,Sören Dhoore,Xin Fu,Alban Gassenq,Nannicha Hattasan,Qiangsheng Huang,Sulakshna Kumari,Shahram Keyvaninia,Bart Kuyken,Lianyan Li,Pauline Mechet,Muhammad Muneeb,Dorian Sanchez,Haifeng Shao,Thijs Spuesens,Ananth Subramanian,Sarah Uvin,M. Tassaert,Kasper Van Gasse,Jochem Verbist,Ruijun Wang,Zhechao Wang,Jing Zhang,Joris Van Campenhout,Xin Yin,Johan Bauwelinck,Geert Morthier,Roel Baets,Dries Van Thourhout,Ghent University-IMEC +34 more
TL;DR: In this paper, the authors review the work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing and elaborate on the integration strategy and describe a broad range of devices realized on this platform.
Journal ArticleDOI
Survey of Photonic and Plasmonic Interconnect Technologies for Intra-Datacenter and High-Performance Computing Communications
Christos A. Thraskias,Eythimios N. Lallas,Niels Neumann,Laurent Schares,Bert Jan Offrein,Ronny Henker,Dirk Plettemeier,Frank Ellinger,Juerg Leuthold,Ioannis Tomkos +9 more
TL;DR: It is shown that photonic technologies have the potential to meet the requirements for selected HPC and DC applications in a shorter term, and that plasmonic interconnect modules could offer ultra-compact active areas, leading to high integration bandwidth densities, and low device capacitances allowing for ultra-high bandwidth operation that would satisfy the application requirements further into the future.
Journal ArticleDOI
Heterogeneous Silicon/III–V Semiconductor Optical Amplifiers
Michael L. Davenport,Sandra Skendzic,Nicolas Volet,Jared Hulme,Martijn J. R. Heck,John E. Bowers +5 more
TL;DR: In this article, high output power and high gain semiconductor optical amplifiers integrated on a heterogeneous silicon/III-V photonics platform have been reported for a wide range of photonic integrated circuits.
Journal ArticleDOI
Silicon and hybrid silicon photonic devices for intra-datacenter applications: state of the art and perspectives [Invited]
TL;DR: A wavelength-division-multiplexing (WDM)-based optical interconnect for intra-datacenter applications is proposed and several large challenges and problems for silicon and hybrid silicon photonics to meet for interconnects in datacenters are outlined and proposed.
References
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High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted
Shinji Matsuo,Akihiko Shinya,Takaaki Kakitsuka,Kengo Nozaki,Toru Segawa,Tomonari Sato,Yoshihiro Kawaguchi,Masaya Notomi +7 more
TL;DR: In this article, an ultracompact InP/InGaAsP buried heterostructure photonic-crystal laser with high-speed direct modulation (3-dB modulation bandwidth of 5.5 GHz) was demonstrated at room temperature by optical pumping.
Journal ArticleDOI
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