Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

TLDR: In this article, surface potential and drain current models for a physically based double halo metal-oxide-semiconductor-field effect transistor (MOSFET) are reported, where the conventional silicon-dioxide (SiO2) material is replaced with a promising high-k dielectric material hafnium oxide (HfO2).

Abstract: Surface potential and drain current models for a physically based double halo metal–oxide–semiconductor-field-effect-transistor (MOSFET) are reported. The proposed models have been established in sub-threshold mode of MOSFET operation. The depletion layer depth used in the pseudo two dimensional Poisson’s equation comprises the effect of two symmetrical pocket implantations at both the ends of the channel region. In this effort, improvement in the investigation is brought in by taking lateral asymmetric channel owing to non-uniform doping. The conventional silicon-dioxide (SiO2) material is replaced with a promising high-k dielectric material hafnium oxide (HfO2) to analyze the surface potential and drain current models. Analytical results have been compared using Synopsys technology computer aided design (TCAD). Excellent conformities between the analytical models and simulations are observed.