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Journal ArticleDOI

Efficiency-enhanced CMOS rectifier for wireless telemetry

C.-L. Chen, +2 more
- 31 Aug 2007 - 
- Vol. 43, Iss: 18, pp 976-978
TLDR
In this article, an efficiency-enhanced CMOS full-wave rectifier with low dropout voltage is presented, where the output voltage of the proposed rectifier is greater than that of the conventional one.
Abstract
An efficiency-enhanced CMOS full-wave rectifier with low dropout voltage is presented. Both the conventional and the proposed rectifiers have been fabricated in a 0.35 mum CMOS process. Experimental results show the output voltage of the proposed rectifier is greater than that of the conventional one. Moreover, the proposed rectifier improves efficiency by more than 10%, compared with the conventional one.

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Citations
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Journal ArticleDOI

A High-Efficiency Low-Voltage CMOS Rectifier for Harvesting Energy in Implantable Devices

TL;DR: A new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants using bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches achieves a significant increase in its overall power efficiency and low voltage-drop.
Journal ArticleDOI

Active High Power Conversion Efficiency Rectifier With Built-In Dual-Mode Back Telemetry in Standard CMOS Technology

TL;DR: An active rectifier with high power conversion efficiency (PCE) implemented in a 0.5- mum 5 V standard CMOS technology with two modes of built-in back telemetry; short- and open-circuit.
Journal ArticleDOI

A novel low-drop CMOS active rectifier for RF-powered devices: Experimental results

TL;DR: In this paper, a new full-wave rectifier topology is presented, which uses MOS transistors as low-loss switches to achieve a significant increase in overall power efficiency and reduced voltage drop.
Journal ArticleDOI

A $\mu$ W Complementary Bridge Rectifier With Near Zero Turn-on Voltage in SOS CMOS for Wireless Power Supplies

TL;DR: An inherent shortcoming of rectifiers designed using standard CMOS devices is poor low input power performance but it is shown that this can be overcome through the use of intrinsic devices with close to zero-threshold voltage available in a 0.25 μm silicon-on-sapphire CMOS process.
Journal ArticleDOI

Inductive Power Link for a Wireless Cortical Implant With Two-Body Packaging

TL;DR: In this article, an inductive power link for remote powering of a wireless cortical implant is presented, which includes a Class-E power amplifier, a gate driver, inductive link, and an integrated rectifier.
References
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Journal ArticleDOI

Fully integrated wideband high-current rectifiers for inductively powered devices

TL;DR: In this paper, the design and implementation of fully integrated rectifiers in BiCMOS and standard CMOS technologies for rectifying an externally generated RF carrier signal in inductively powered wireless devices, such as biomedical implants, radio-frequency identification (RFID) tags, and smartcards to generate an on-chip dc supply.
Journal ArticleDOI

A model for /spl mu/-power rectifier analysis and design

TL;DR: A linear two-port model for an N-stage modified-Greinacher full-wave rectifier that predicts the overall conversion efficiency at low power levels where the diodes are operating near their threshold voltage is proposed.
Journal ArticleDOI

A low-power transponder IC for high-performance identification systems

TL;DR: A novel CMOS integrated circuit for a batteryless transponder system that gives a superior performance in reading distance due to separation of the powering and data transmission phases-compared to systems with continuous powering and damping modulation.
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