Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on
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TLDR
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope) as mentioned in this paper.Abstract:
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.read more
Citations
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Journal ArticleDOI
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
TL;DR: In this article, a 2D negative capacitance effect with poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE) was used to achieve sub-60mV/decade (below the thermal limit) switching in FETs.
Journal ArticleDOI
Non-Volatile Ferroelectric FETs Using 5-nm Hf 0.5 Zr 0.5 O 2 With High Data Retention and Read Endurance for 1T Memory Applications
K.-T. Chen,H.-Y. Chen,C.-Y. Liao,G.-Y. Siang,C. Lo,Ming-Han Liao,K.-S. Li,Shun-Ping Chang,Min-Hung Lee +8 more
TL;DR: In this article, a gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented, and the mechanism of retention and endurance was discussed.
Journal ArticleDOI
Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical Modeling
TL;DR: In this article, a short-channel negative capacitance gate-all-around tunnel field effect transistor (NC-GAA-TFET) with a ferroelectric gate stack is proposed.
Journal ArticleDOI
Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack
Chien Liu,Chien Liu,Ping Guang Chen,Ping Guang Chen,Meng Jie Xie,Shao Nong Liu,Jun Wei Lee,Shao Jia Huang,Sally Liu,Yu-Sheng Chen,Heng Yuan Lee,Ming-Han Liao,Pang-Shiu Chen,Min-Hung Lee +13 more
TL;DR: In this paper, an ultrathin-body double gate tunnel FET (UTB-DG-TFET) exhibits a steep slope (a subthreshold swing below 10 mV/dec over more than 4 orders of magnitude) for low-power applications.
Journal ArticleDOI
Dopingless ferroelectric tunnel FET architecture for the improvement of performance of dopingless n-channel tunnel FETs
TL;DR: In this article, the authors proposed a novel tunnel field effect transistor (TFET) based on charge plasma (CP) and negative capacitance (NC) for enhanced ON-current and steep sub-threshold swing (SS).
References
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