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General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Stresses and silicon interstitials during the oxidation of a silicon substrate
TL;DR: In this article, a model of viscoelastic flow in SiO2, layers grown on silicon substrates is introduced to explain various phenomena, such as interstitial and vacancy concentrations in silicon during oxidation, and related to the oxidation stacking fault length.
Journal ArticleDOI
Electrochemical Kinetics of SEI Growth on Carbon Black: Part I. Experiments
TL;DR: In this article, the authors measured the dependence of SEI growth on potential, current magnitude, and current direction during galvanostatic cycling of carbon black/Li half cells and found that SEI grows strongly with nominal C rate and is significantly higher on lithiation than on delithiation.
Journal ArticleDOI
Real-time imaging of vertically aligned carbon nanotube array growth kinetics.
TL;DR: In situ time-lapse photography and laser irradiation are applied to understand unusual coordinated growth kinetics of vertically aligned carbon nanotube arrays including pauses in growth, retraction, and local equilibration in length.
Journal ArticleDOI
Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory
Scott T. Dunham,James D. Plummer +1 more
TL;DR: In this article, an analytic expression for the supersaturation of interstitials during oxidation was derived by using relationships based on the continuity equations in the oxide and applying a proposed set of boundary conditions to the oxidizing Si-SiO2 system.
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
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Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.