Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
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In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.Abstract:
The thermal‐oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 A) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico‐chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space‐charge effects on the initial phase of oxidation.read more
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Process optimization tweaking tool (POTT) and its application in controlling oxidation thickness
TL;DR: P as mentioned in this paper extracts process data from a manufacturing statistical process control database, calculates oxidation times appropriate to recenter the thickness to the desired process mean, and inserts the values of new oxidation times directly into furnace oxidation recipes resident in the main BTU host computer.
Journal ArticleDOI
Effects of fluorine implantation on the kinetics of dry oxidation of silicon
TL;DR: In this article, the authors investigated the effect of implantation of fluorine in the oxide layer of silicon and showed that implanted fluorine can result in negative values of the linear oxidation rate constant.
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Theoretical modeling of SiO2 photochemical vapor deposition and comparison to experimental results for three oxidant chemistries: SiH4 + O2, H2O/O2, and H2O2
TL;DR: In this paper, an independent sheet simulation of photochemical vapor deposition (ISSPCVD) is introduced that illustrates the roles of chemical reactions and transport in photo-CVD, and a simple model for diffusion and integration of a small number of chemical reaction rate equations is performed, and this work shows that one SiOxHy intermediate is the dominant precursor to SiO2 deposition.
Journal ArticleDOI
Differential scanning calorimetry measurements of kinetic factors involved in salicide process
TL;DR: In this paper, an experimental procedure allowing the measurement of kinetic factors controlling the reaction of a nanometric film with a monocrystalline substrate by differential scanning calorimetry (DSC) is described.
Journal ArticleDOI
Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces
Tatsuo Matsudo,Tomohiro Ohta,Tetsuji Yasuda,Masayasu Nishizawa,Noriyuki Miyata,Satoshi Yamasaki,Alexander A. Shklyaev,Masakazu Ichikawa +7 more
TL;DR: In this paper, the authors used reflectance difference (RD) spectroscopy to detect layer-by-layer oxidation of Si(001)-(2×1) surfaces and demonstrated the possibility of in situ counting and control of the number of oxidized layers.
References
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Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Journal ArticleDOI
Permeation of Gaseous Oxygen through Vitreous Silica
TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.